頁籤選單縮合
題名 | IGBT的短路特性及短路保護=The Short Circuit Characteristics and Protection Circuits of IGBTs |
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作者 | 薛添福; | 書刊名 | 電力電子技術 |
卷期 | 31 1996.02[民85.02] |
頁次 | 頁21-26 |
分類號 | 448.532 |
關鍵詞 | 絕緣閘雙載子電晶體; 短路特性; 保護電路; IGBT; Short circuit characteristics; Protection Circuit; |
語文 | 中文(Chinese) |
中文摘要 | 目前IGBT的短路承受時間,逐漸地延長至接近功率電晶體的程度。因 此對其保護電路的要求可放寬許多,然而,天下沒有自吃的午餐,通常短路特性 好的IGBT其順向的壓降亦較高,因此導致整個系統的效率降低。如何選擇適當 的元件,並配合適當的驅動及保護電路,以達到系統保護及效率的需求,本文將 對IGBT短路發生的原因及可能的保護方式作一探討。 |
英文摘要 | Recently, the short-circuit withstand time of IGBTs is gradually approached tothe power BJT's, thus, the performance requirements of the short-circuit protection ofIGBTs can be alleviated. However, the extension of the short-circuit withstand timeof IGBTs is a trade off with their conduction voltage drop which means the system efficiency will be decreased when using a IGBT with a longer short-circuit withstandtime. Therefore, how to choose an IGBT with a appropriate gate drive and protectioncircuits, so as to balance the protection circuit requirements and the system efficiency,becomes a practical problem. In this paper, the possible reasons for a short-circuit andthe pros and cons of some existing protection schemes will be investigated. |
本系統之摘要資訊系依該期刊論文摘要之資訊為主。