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題名 | InGaAs/GaAs Quantum wells Grown by Metal-Organic Chemical Vapor Deposition using Tertiarybutylarsine Source=使用三丁基砷以有機金屬化學氣相沈積法成長砷化銦鎵/砷化鎵量子井結構 |
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作 者 | 蘇炎坤; 管鴻; 鄒文正; | 書刊名 | 真空科技 |
卷期 | 8:1/2 民84.08 |
頁次 | 頁20-29 |
分類號 | 337.472 |
關鍵詞 | 三丁基砷; 有機金屬化學氣相沉積; 光激發光; 量子井; Tertiarylarsine; MOCVD; Photoluminescence; Quantum well; |
語文 | 英文(English) |
中文摘要 | 三丁基砷有機金屬源已作為有機金屬化學汽相沈積法之前導物,並對於磊晶成長與砷化銦鎵/砷化鎵應力層量子井詳細探討。砷化銦鎵的磊晶層成長速率約0.625μm/h,本實驗先對砷化銦鎵/砷化鎵單量子井作一研究,其中分別由組成x=0.1及量子井厚度Lz=50與組成x=0.17時,其厚度150 A,其次對於多量子井則分別由固定x=0.15時不同的量子井厚度(Lz=50, 100與150 A)與固定量子井厚度Lz=100 A時不同的組成(x=0.15, 0.2與0.3),當組成x由0.045增加到0.16時,光激發光譜的半高寬則由12.35mev增至33.28mev,而對於拉曼光譜之測量,當組成x由0.0455增至0.25時,GaAs-like LO模式頻率往較低頻率移動。 |
英文摘要 | The metal-organic chemical source, tertiarybutylarsine (TBA) has been studied for their possible use as precursor in the metalorgainc chemical vapor deposition (MOCVD) process. The epitaxial growth and the InGaAs/GaAs strained quantum well will be studied in detail. In InGaAs heteroepitaxial layer, the growth rate of InGaAs epilayer is 0.625μm/hr. In our work, a system of InGaAs/GaAs strained single quantum wells SQWs has been investigated. SQW including indium compositions x=0.1 and 0.17 with well widths Lz between 50 and 150A has been studied. Multi-quantum wells (MQW-1) consist of various well width (50, 100, 150 A) with fixed composition x=0.15 and MQW-2 samples have different indium compositions (x=0.15, 0.2 and 0.3) with fixed wellwidth Lz=100 A. The photoluminescence (PL) spectra measured at 10K of all undoped SQW and MQW are investigated. When the composition x increases from 0.045 to 0.16, the values of FWHM for PL spectra increase from 12.35 meV to 33.28 meV. For the Raman spectra, when the indium composition increases from 0.0455 to 0.25, the frequency of the GaAs-like LO mode shifts to lower frequency. |
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