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題 名 | ZnGa[feaf]O[feb2]:Co螢光體的光激發光特性之研究=Photoluminescence Study of ZnGa[feaf]O[feb2]Doped with Co[fec7] |
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作 者 | 徐開鴻; 楊木榮; 陳克紹; | 書刊名 | 鑛冶 |
卷 期 | 42:4=164 1998.12[民87.12] |
頁 次 | 頁69-72 |
分類號 | 440.38 |
關鍵詞 | 螢光體; 氧化鎵鋅; 光激發光; Phosphors; ZnGa[feaf]O[feb2]:Co; Phololuminescence; Zinc gallate; |
語 文 | 中文(Chinese) |
中文摘要 | 由固態反應法合成的ZnGa O 螢光体,在無攙雜處理狀況下的發光光譜呈470nm藍色光。經攙雜 Co 離子後,其發烷波峰偏移到666nm的紅色光域。經其吸收光譜與Tanabe-Sugano(3d) 能階圖比對, 得知攙雜的Co 離子在ZnGa O 中是取代Zn 而佔據四面体次晶格的A位置。經其能階的分裂與電子遷 移的狀況而估算出其結晶場參數Dq=312cm ,Racah參數B=779cm 。而666nm的發光遷移符合 T1(4P) A (4F)的自旋允許遷移。攙雜Co 離子的濃度影響到發光強度,Co 離子濃度超過0.5mol%之 後,幾乎不發光。 |
英文摘要 | The undoped ZnGaO prepared by solid state reaction method can emit blue light with the emission peak at 470nm. The doping of Co shifts the emission peak to 666 nm, red light. Comparing the absorption spectrum with Tanabe-Sugano(3d) energy diagram, the dopant Co should substitute Zn and occupy the A sites of tetrahedral structure, which causes the shift of emission bands to 666 nm. Crystal field parameter (Dq) and Racoh parameter (B) were determined from the energy spliting and energy transition to be 312 cm and 779 cm , respectiviely. The emission intensity increases with increasig the concentration of Co dopant, and reaches a maximum as the concentration is 0.05 mol%. The emission intensity deteriorated seriously when the conentration of doped Co is over 0.5 mol%. |
本系統中英文摘要資訊取自各篇刊載內容。