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題 名 | Process Engineering Analysis in Silicon Diffusion Wafer Fabrication=矽晶擴散片製程分析 |
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作 者 | 羅吉宗; 吳育民; | 書刊名 | 大同學報 |
卷 期 | 24 1994.11[民83.11] |
頁 次 | 頁297-305 |
分類號 | 448.552 |
關鍵詞 | 矽晶擴散片; 製程; |
語 文 | 英文(English) |
中文摘要 | 以傳統擴散技術製造汽車二極體,擴散晶片之製程管制要領將被深入討論。擴散 晶片之擴散深度與參雜濃度分布都遵守費克( Fick's )擴散定律。此二極體運作之整流與 調變特性由 I-V、C-V 與 Trr 量測,都與理論值一致。 |
英文摘要 | Conventional diffusion technique is used to manufacture the car diode devices. The key point of diffusion processes control are discussed in detail. The measured junction depth and carrier concentration profiles are well behaved and agree with Fick's diffusion laws. The rectification and switching characteristics of silicon p-n junction car diodes are measured from current-voltage curve, capacitance-voltage curve, and the reverse recovery time of the diode. All the operation data are consistent with the theoretical values. |
本系統中英文摘要資訊取自各篇刊載內容。