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題名 | 以直流電漿化學氣相沉積法使用氯化甲烷成長鑽石薄膜 |
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作者 | 洪昭南; 許嘉元; 陳隆; 黃貞浩; 梁國超; | 書刊名 | 真空科技 |
卷期 | 7:1 1994.06[民83.06] |
頁次 | 頁12-17 |
分類號 | 341.927 |
關鍵詞 | 直流; 氯化甲烷; 電漿化學氣相沉積法; 鑽石薄膜; |
語文 | 中文(Chinese) |
中文摘要 | 以直流電漿化學氣相積法(DC plasma CVD)使用氯化甲烷成長鑽石薄膜是結合了大量電子轟擊基板表面及容易成核的優點。在反應溫度同樣為600℃時,若以氯化甲烷為反應氣體,鑽石薄膜的成長速率是甲烷的八倍。而且甲烷在500℃以下並不能有效的成長鑽石,但氯化甲烷卻可在更低溫下高速成長出晶形佳的鑽石晶粒(3μJm/hr在500℃,0.9μm/hr在300℃)。此外,氯化甲烷反應氣體可在廣泛的壓力範圍成長出晶形不錯的鑽石晶粒。當成長壓力由210 torr降到30torr,膜的平整度很明顯的改善,Ra值從500nm降到50nm。對於這些鑽石膜在成長壓力低於60torr時,紅外線穿透光譜(IR transmission spectra)在汲數400~4000cm-1的範圍內存在週期性的震盪且其穿透強度平均為100%,證實了這些膜的高品質及高平整度。相反的,以甲烷為反應氣體,所成長出鑽石膜總是粗糙的。 |
英文摘要 | Diamond film growth using chloromethane by DC plasma CVD was studied to combine the advantages of high elelctron flux bombarding on the substrate surface and easy nucleation by chloromethane. The growth rate of diamond film using CHCI3 was 8 times as fast as that using CH4 at 600℃. Besides, although methane was inefficient in growing diamond below 500℃, chloromethane could grow faceted diamond crystallites fast at low temperatures (3μ m/hr at 500℃, and 0.9 μ m/hr at 300℃ when using CHCI3). Furthtermore, CHC13 could grow faceted diamond crystallites in a wide pressure range, Film smoothness improved quite significantly, Ra from 500nm to 50nm, as the growth pressure reduced from 210 torr to 30 torr. For those diamond films grown below 60 torr, the IR transmission spectra of the free-standing films over 400-4000 cm-1 range exhibited a periodic oscillation of intensity at an average of 100% transmission, indicating the high quality and highly smooth films, on the other hand, films grown by methane were always rough. |
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