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題名 | Low Temperature Growth of Diamond Films Using Choromethane=氯化甲烷低溫成長鑽石薄膜 |
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作者 | 梁國超; 吳季珍; 張道生; 陳隆; 謝錦全; 洪昭南; | 書刊名 | Journal of the Chinese Institute of Chemical Engineers |
卷期 | 24:5 1993.09[民82.09] |
頁次 | 頁331-341 |
分類號 | 460.02 |
關鍵詞 | 低溫; 氯化甲烷; 薄膜; 鑽石; |
語文 | 英文(English) |
中文摘要 | 本論文以氯化甲烷為碳源從事低溫鑽石薄膜合成之研究,實驗結果顯示基板溫度低於 600℃時,氯化甲烷仍可成長品質良好之鑽石薄膜,但甲烷則否。在熱鎢絲系統以四氯化碳為碳源,可於380℃低溫下成功合成鑽石膜,成長速率為0.05µm/hr。使用直流電漿系統時,可將低溫鑽石薄膜成長速率大幅提升,以三氯甲烷為碳源,在基板溫度500及300℃之成長速率分別為3及0.9µm/hr。對於氯化甲烷適宜低溫合成鑽石膜之原因,作者將分別就氣相與固相表面反應兩方面探討之。 |
英文摘要 | Chloromethane (CH₂Cl₂, CHCl₂ and CCl₄) was utilized in this present work as a carbon source for growing a diamond film at a low temperature(ranging from 300℃ to 700℃). Chloromethane was quite suitable for the growth of diamond at a low substrate temperature, as indicated from a comparison with methane with methane which was difficult to grow a diamond below 600℃. Diamond growth was possible even at 380℃ (growth rate=0.05µm/hr), which was the lowest temperature possible in our hot-filament CVD system, by using CCl₄ reactant. On the other hand, chloromethane could rapidly grow faceted diamond crystallites at low temperature (3µm/hr at 500℃, and 0.9µm/hr at 300℃ when using CHCl₃) by DC plasma CVD method. Possible explanations involving the gas phase and surface reaction mechanisms were proposed for diamond film growth using chloromethane reactants. |
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