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題 名 | Extrinsic Base Consideration in BiPMOS Transistors=BiPMOS電晶體外部基極結構之考慮 |
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作 者 | 陳衍文; | 書刊名 | 中國工程學刊 |
卷 期 | 14:4 1991.07[民80.07] |
頁 次 | 頁341-347 |
分類號 | 448.533 |
關鍵詞 | 基極; 結構; 電晶體; |
語 文 | 英文(English) |
中文摘要 | 本文針對雙載子元件在BiCMOS電路環境pull-up暫態時的特性,利用二維元件模擬 器 PISCES 作詳細的二維數值模擬。 在雙載子元件中之特有的電荷累積與去除現象, 決定 BiPMOS 元件的交換速度。 本文亦以交換速度快慢的觀點,進行探討設計外部基極的得失。 經由模擬結果得知,以最遠離內部基極之外部基極結構的 BiPMOS 元件,其交換速度最快。 此主要原因是其起始之基極電壓最大與水平基極效果造成。 |
英文摘要 | This paper presents a detailed two-dimensional numerical simulation study of the bipolar device in the BiCMOS circuit environment during pull-up transient. The unique carrier build-up and removal in the bipolar device during transient, inducing an internal voltage overshoot, determines the switching speed of the BiPMOS device. The tradeoffs in designing the extrinsic base in terms of the switching behavior are also described. It is shown that the structure with the extrinsic base P+ area farthest from the intrinsic base region has the best switching speed owing to the smallest base-to-emitter capacitance and the lateral base effects. |
本系統中英文摘要資訊取自各篇刊載內容。