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題名 | 非晶矽超晶格光電晶體之研製 |
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作者姓名(中文) | 卓信誠; | 書刊名 | 技術學刊 |
卷期 | 5:2 1990.06[民79.06] |
頁次 | 頁145-150 |
分類號 | 448.552 |
關鍵詞 | 光電晶體; 非晶矽; 研製; 超晶格; |
語文 | 中文(Chinese) |
中文摘要 | 在本論文中,成功利用電漿助長化學氣相沉積法,製造出npn與pnp型的非晶矽超晶格光電晶體。對npn型超晶格光電晶體而言,當入射光功率為5微瓦時,可得到333的光增益。此外,利用光電流倍乘法,把npn型當作純電子入射條件,把pnp型當作純電洞入射條件,可得此種元件結構的電子與電洞游離率。當所加電場為2.05X 105 V /cm時,可得到電子對電洞的游離率比為7.05。另外,從超額雜訊量測法得到的結果馬6.849。此元件的峰值響應波長可隨著所加偏壓與井寬度而變,故可當作波長選擇光感測器。 |
英文摘要 | In this study new npn and pnp amorphous silicon supedattice pho-totransistors (SLPT) have been sucessfully fabricated on ITO/glass substrate by plasma enhanced chemical vapor deposition (PECVD). For npn SLPT, an optical gain as high as 333 can be obtained at Pin = 5μw. In addition, photocurrent multiplication measurements have been performed on npn and pnp SLPT under pure electron and hole injection conditions, respect-tively. The ratio is 7.05 at a fixed electric field of 2.05 x 105 V/cm. The ratio estimated from the excess noise measurement is 6.849. Besides, a variety of peak response wavelength is achievable by changing the applied bias and the well width in the SL structure, making the device useful as a wave-length selective photosensor. |
本系統之摘要資訊系依該期刊論文摘要之資訊為主。