頁籤選單縮合
題名 | A Study on Near Infrared c-Si Phototransistors=近紅外線單晶矽光電晶體的研究 |
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作者 | 施能夫; | 書刊名 | 樹德學報 |
卷期 | 24 1999.08[民88.08] |
頁次 | 頁111-118 |
分類號 | 448.552 |
關鍵詞 | 吸收; 光電晶體; 累崩; Absorption; Phototransistor; Avalanche; |
語文 | 英文(English) |
中文摘要 | 藉由控制不同的基極佈植濃度可得具基極接面深度為4微米,其共射極直流電流 增益介於300∼1100之間,且適用於任何傳統商業上光偵測運作的單晶矽光電晶體。該光電 晶體的基極開路崩潰電壓在集極射極電壓為5伏特集極射極漏電流為100微安培測試時的範 圍,可從輕摻雜基極的35伏特至重摻雜基極的140伏特。而射極開路崩潰電壓在集極基極 電壓為5伏特集極基極漏電流為100微安培測試時的範圍,可從輕摻雜基極的40伏特至重 摻雜基極的220伏特。崩潰的機制有穿透崩潰及累崩崩潰兩種機制。 |
英文摘要 | C-Si phototransistor with base junction depth around 4.0μm with its common emitter dccurrent gain within 300 ~ 1100 had been well controlled by implanting different base doping levels, which is suitable in any conventional commercial photo-sensing application. The open base breakdown voltage BV□ranges from 35V (for lightly doped base) to 140V (for heavier doped base) under the test condition of I□=100μA, the collector-emitter leakage current for base current I□=0. While the open emitter breakdown voltage is within 40V (for lightly doped base) ~ 220V (for heavier doped base) under I□=100μA and I□=0A. The breakdown mechanism includes punch through and avalanche multiplication. |
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