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| 題 名 | 反應鍵結氮化矽之微波介電性質 |
|---|---|
| 作 者 | 周磐基; 李仲仁; 黃銘欽; | 書刊名 | 材料科學 |
| 卷 期 | 18B:2 民75.12 |
| 頁 次 | 頁89-95 |
| 分類號 | 440.2 |
| 關鍵詞 | 反應鍵結; 氮化矽; 微波; 介電性質; |
| 語 文 | 中文(Chinese) |
| 中文摘要 | 矽粉中混以5w/o之氮化矽粉末作為添加劑,先經CIP均壓成形,再於氫 氣中進行1,200℃預燒處理後加工成所需尺寸,再分別以1,350℃、1,400℃及1,450 ℃三階段進行反應鍵結,成品之性質均能穩定地保持在密度2.5g/cm�纂A抗折強度 1,725 MPa~2,070 MPa之間)但微披 (10GHz)之介電常數及正切損失tanδ則變化很 大。若再經過1,550℃以上之高溫熱處理,則其介電性質趨於穩定而適合作為微 波工程組件使用。 |
| 英文摘要 | Reaction-bonded silicon nitride (RBSN) made from silicon compact,using Si�衹�� powder as additive shows better nitridation than silicon compact without additive. Silicon powder mixed with 5 w of Si�衹�� powderwas compacted by cold isostatic press (CIP), then the compacts were presintered at 1200℃ in argon atmosphere. After machining, the pre-sinteredspecimens were nitrided through three stages: 1350℃, 1400℃,and 1450℃,respectively. The nitrided specimens are consistent in density, 2.53~2.54g/cm��, and flexture strength, 1725 MPa~2070 MPa. The dielectric constantand dielectric loss are consistent only after heat-treatment at temperaturehigher than 1550℃. |
本系統中英文摘要資訊取自各篇刊載內容。