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題名 | Studies on the Conduction Mechanism of Thallium Oxide Thick Film Resistors=氧化鉈系厚膜電阻導電結構之研究 |
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作者 | 傅勝利; | 書刊名 | 材料科學 |
卷期 | 10:3 1978.09[民67.09] |
頁次 | 頁66-72 |
關鍵詞 | 厚膜; 氧化鉈系; 結構; 電阻; 導電; |
語文 | 英文(English) |
中文摘要 | 在氧化鉈系厚膜電阻體中,其片電阻係數 (Sheet Resistivity) 與電阻體內所含導電成分 (Tl2O3) 之體積百分比 (F%) 問,可以表示成為ρs= exp (a/F)p ,其中ρs,為片電阻係數,α與p均為常數,其結果與Bulgin所導引的結果十分近似,此一實驗結果之理論導引可以先假設片電阻係數與導電粒子間之距離成比例關係,即ρs ∞ exp (k2d) ,k為一常數,d為顆粒間距離,藉數學運算可得上述公式ρs=exp (a/F)p,在計算過程中並使用Polley所提之模型來計算導電粒子間的距離,但對含Tl2O3 70% (重量比) 以上之電阻體,由Polley模型計算出來的距離將出現負值而與實際情況不合,但對40%至70%Tl2O3含量之電阻則十分吻合,其原因可能係由於導電粒子間產生燒結 (Sintering) 現象,有待進一步之研究。經解析後可以,寫出更為真切之方程式ps=k1exp (k2d),其中k1與k2均為常數,d為由Polly模型所求出之距離,同時曲研究可知exp (k2dA) 應與常數k1有關,dA為導電粒子的粒徑。 |
英文摘要 | The relationship between the sheet resistivity (ρs) and the volume fraction (F%) of thallium oxide conducting particles can be expressed as ρs = exp (a/F)p, where a and p are constants, in thallium oxide thick film resistors. The results are similar to the deduction of Bulgin in conductive rubber. The model of conduction mechanism can be deduced from an assumption that sheet resistivity is dependent on the gap distance between conducting particles, i.e.,ρsαexp (k2d), where k2 is a constant and d is the gap distance. By using of Polley's model with a further assumption that the conducting particles are spherical in shape, the gap distance between conducting particles can be calculated, and the equationρs = exp (a/F)p can then be deduced. A more detail equation can be written as ρs = k1.exp (k2d), k1 and k2 are constants. From this study, it can be seen that the sheet resistivity is dependent on the size of the conducting particle, also. |
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