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頁籤選單縮合
題名 | 鋁單晶之差排 |
---|---|
作者姓名(中文) | 藍山明; 饒嵩山; | 書刊名 | 材料科學 |
卷期 | 8:3 1976.09[民65.09] |
頁次 | 頁109-117 |
關鍵詞 | 差排; 鋁單晶; |
語文 | 中文(Chinese) |
中文摘要 | 99.98% 與 99.999% 兩種純度之鋁單晶,採用垂直凍結法生長,以化學腐蝕坑法分析其差排之種類與密度,其結果如下:(1) 鋁單晶立差排密度與其長速無關 (0.7到 13 cm/hr) ,但與其純度有著密切關係 (~105/cm2 在 99.98% 純度鋁單晶,~103/cm2 在 99.999% 純度鋁單晶)。 (2) 條紋構造與橫帶構造的生成與單晶之長速和純度有關係。(3) 差排叢正好位在條紋構造處。(4) 差排叢經退火處理後會消散。(5) 差排密度經退火處理後,其值會減少10倍。(6) 藉橫帶構造之分析,可以間接觀察固態──液態介面之幾何形狀。從這些分析結果,顯示空洞凝縮機構並不適於解釋差排生成原因,而以雜質微粒凝結核機構解說差排生成原因較為恰當。 |
英文摘要 | Purities of 99.98% and 99.999% aluminum single-crystals were grown by vertical freezing method. The types and densities of dislocations were studied by a chemical etch-pit technique. The results obtained are as follows: (1) The dislocation density was found to nearly constant over the range of growth rates (0.7-13 cm/hr.), but depends markedly on the purities of crystals (~105/cm2 for 99.98% purity Al-crystals and ~103/cm2 for 99.999% purity Al-crystals). (2) The formations of striations and cross-bands are dependent upon the rate of growth and purity. (3) The dislocation clusters are just situated at the striations. (4) The dislocation clusters disappeared after annealing treatment. (5) The dislocation densities were reduced by one order after annealing treatment. (6) The existence of cross-band structures can give an indirect observation of the geometry of the solid-liquid interfaces. It has been shown that these results are incompatible with the vacancy condensation mechanism as the origin of dislocation while consistent with the impurity nucleation mechanism. |
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