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頁籤選單縮合
題 名 | 二維半導體之合成及光電元件=Synthesis and Applications of Monolayer Semiconductors |
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作 者 | 莊孟熹; 廖昶寧; 陳柏翰; 曾國瑋; 陳奕彤; 蔣宜成; 柯姝廷; 劉曉澤; 李奕賢; | 書刊名 | 奈米通訊 |
卷 期 | 23:2 2016.06[民105.06] |
頁 次 | 頁9-16 |
關鍵詞 | 過渡金屬硫族化合物; 異質結構; 化學氣相沉積法; 可撓式元件; 光電性質; TMDc; Heterostructure; CVD; Flexible device; Optoelectronics; |
語 文 | 中文(Chinese) |
中文摘要 | 近年來,過渡金屬硫族化合物(Transition Metal Dichalcogenides,簡稱TMDc),如二硫化鉬、二硒化鎢等單層之二維半導體材料,因具有強自旋軌域耦合特性(Spin-Valley Coupling)、特殊的能帶結構、優異的可撓屈性及光電特性,而受到國際高度關注。此類二維材料,雖然僅具次奈米等級厚度,卻具有極高的光響應(Photoresponse)、高吸收度以及良好的電子傳輸特性,因此,預期於多種低耗能的光電元件或可撓式奈米元件,具有高度發展及研究潛力。本文中,我們將介紹單層二維半導體之合成與應用,二維TMDc 半導材料的製程,將促進材料科學、基礎科學及光電領域等相關研究,和後續半導體產業之應用。 |
英文摘要 | Recently, semiconducting monolayers, such as MoS_2 and WSe_2, have been highlighted for their spin-valley coupling, diverse band structures, bendability, and excellent optoelectronic performances. With a subnanometer thickness of atomic layers, the transition metal dichalcogenides (TMDc) atomic layers demonstrate a significant photoresponse, considerable absorption to incident sunlight and favorable transport performances, leading to applications in the electronic circuit requiring low stand-by power, diverse optoelectronic devices, and next-generation nanoelectronics. Therefore, the class of monolayer TMDc offers a burgeoning field in materials science, fundamental physics, and optoelectronics. A feasible synthetic process to realize controlled synthesis of large area and high quality of TMDc monolayers is in demands. In this review, we will introduce the progress on synthesis and applications of the TMDc atomic layers. |
本系統中英文摘要資訊取自各篇刊載內容。