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題名 | 內連接導線系統之可靠度--銅導線/低介電絕緣層=Reliability of Cu/Low-k Interconnects |
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作者 | 鄭義榮; 黃俊夫; 栢添賜; 高楷傑; 黃麒嘉; |
期刊 | 奈米通訊 |
出版日期 | 20130300 |
卷期 | 20:1 2013.03[民102.03] |
頁次 | 頁34-42 |
分類號 | 448.57 |
語文 | chi |
關鍵詞 | 可靠度; 內連線; 銅; 低介電質材料; 電致遷移; 應力遷移; 崩潰時間; Reliability; Interconnects; Cu; Low-k dielectric; Electromigration; Stressmigration; TDDB; Breakdown voltage; |
中文摘要 | 先進內連接導線系統中的可靠度項目在本篇論文中詳細地討論,包括金屬銅導線的電致遷移及應力遷移等現象、金屬阻障層阻障特性以及低介電質材料之崩潰可靠度行為作一整理及分析;對於每一個可靠度項目,針對其最新的測試結構、失效機制、改善方法策略及預估壽命模式,也同時在本篇論文中作一說明;並從可靠度的觀點來討論微縮化對銅導線/低介電質材料所構成的內連接導線系統之影響及改善策略。 |
英文摘要 | Reliability characteristics of scaled copper/low-k interconnect schemes, new developed test structures, and the related active degraded mechanisms are discussed in this letter. Metal reliability is assessed by studying electromigration (EM) and stressmigration (SM), while dielectric reliability is evaluated by time dependent dielectric breakdown (TDDB) and breakdown voltage. From a reliability standpoint, an improvement strategy is also proposed for a tight pitch copper/low-k interconnects in this work. |
本系統之摘要資訊系依該期刊論文摘要之資訊為主。