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頁籤選單縮合
| 題 名 | 奈米多孔隙氮化鎵結構應用於高效率氮化銦鎵發光元件=High Efficiency InGaN Optoelectronic Devices with Nanoporous GaN Structures |
|---|---|
| 作 者 | 吳冠錞; 李文哲; 張元暢; 黃琬淳; 謝秉承; 林佳鋒; 黃琬淳; | 書刊名 | 真空科技 |
| 卷 期 | 28:1 2015.03[民104.03] |
| 頁 次 | 頁33-40 |
| 分類號 | 448.552 |
| 關鍵詞 | 氮化銦鎵; 奈米多孔隙氮化鎵; 電化學蝕刻; InGaN; Nanoporous GaN; Electrochemical etching process; |
| 語 文 | 中文(Chinese) |
| 中文摘要 | 本文利用雷射處理與電化學濕式蝕刻技術,製作具有奈米孔洞與空隙結構增加光取出效率的發光二極體元件,側蝕發光元件在未摻雜之氮化鎵層間埋入一高矽摻雜濃度之n型氮化鎵層,經草酸電化學選擇性濕式蝕刻後,由於不同矽摻雜濃度之n型氮化鎵層側蝕速率不同,而在元件底部形成奈米孔洞與空隙結構,具奈米孔洞與空隙層的發光元件光取出效率相較於標準樣品有58%的提升,主要由側向蝕刻形成之奈米孔洞結構散射所造成,在側蝕發光元件中觀察到光激發波長出現藍移的現象,主要因應力釋放現象,在0°~35°角度之螢光光譜量測,可觀察到螢光在420nm~500nm波長範圍間有一高光穿透之特性,而在波段520nm~700nm處則有抑制的現象,可藉此推測LE-LED之奈米孔洞結構,具有一類似於帶通濾波器之光學性質。 |
| 英文摘要 | InGaN-based light emitting diodes (LEDs) with nanoporous and air gap structures were fabricated through the laser treatment and the electrochemical (EC) wet etching process to increase light extraction efficiency. Nanoporous structure was formed at the GaN:Si layer and the air gap structures were formed at the heavily doped GaN:Si layer. Treated lateral etching LED (LE-LED) was analyzed and compared with the standard LED (ST-LED). The LE-LED structure with the GaN:Si nanoporous and the air-gap structures were fabricated through the EC wet etching process on the GaN:Si layers. Light output power of the LE-LED structure had a 58% enhancement compared with the ST-LED structure that had a high light scattering process occurred on the lateral etched nanoporous structure. Light transmittance ratios of the LE-LED were measured at 2.56 times for blue light region (420 to 500nm) and at 0.43 time for yellow light region (520 to 700nm), respectively, compared with the ST-LED structure at lateral 35o detected angle. The transmittance spectrum of the nanoporous GaN:Si structure was similar like a band-pass filter to enhance the light extraction efficiency in InGaN LEDs. |
本系統中英文摘要資訊取自各篇刊載內容。