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題 名 | 絕緣高導熱氮化鋁粉體之製程技術開發與應用前景=Process Technology and Applications of High Thermal Conductive and Electrical Insulating AlN Powder |
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作 者 | 阮建龍; 郭養國; 張百鎔; 呂理煌; | 書刊名 | 新新季刊 |
卷 期 | 42:1 2014.01[民103.01] |
頁 次 | 頁53-64 |
專 輯 | 綠能化學科技研究與發展 |
分類號 | 440.33 |
關鍵詞 | 氮化鋁粉體; 直接氮化法; 自蔓延高溫合成法; 碳熱還原法; AlN powder; Direct nitridation; Self-propagating high temperature synthesis; Carbon thermal reduction; |
語 文 | 中文(Chinese) |
中文摘要 | 隨著半導體技術的蓬勃發展,電子元件朝輕、薄、短、小與高密度演變,當電子元件在使用時所產生的廢熱無法適時排除,除了會造成電子訊號的失真,更甚者將導致元件的損壞,因而降低其可靠性。另一方面,由於近年來全球對高功率LED照明的開發極為熱衷,預期未來四年高亮度LED的全球平均複合成長率為20%,總市場規模在2012年超出112億美元。因此國內外各研究機構無不積極投入降低電子元件發熱功率或開發高效率的散熱機制,以提升電子元件或高亮度LED晶片的壽命。本文針對絕緣高導熱氮化鋁粉體之製程技術,與其後續符合高階散熱需求之應用前景,如功率元件或高亮度LED等關鍵產業,作一說明。 |
英文摘要 | With the flourishing development of semiconductor technology, the electronic device develops towards the lighter, thinner, shorter, smaller and higher density direction. When the excess heat produced during the operation of electronic device can't be dissipated promptly, the electronic signal will be distorted and even more the device will be damaged then causing the degradation of reliability. On the other hand, because the high power LED lighting is abundantly developed in global market recently, it is expected that the global average growth rate of high brightness LED is 20% in the following four years and the total market scale would go beyond 11,200 million US dollars in 2012. Therefore, many domestic and foreign research institutions have devoted much effort into the reduction of device heat power or the development of high-efficiency heat-dissipating mechanism in order to improve the life-span of the electronic device or high brightness LED chip. In the following main text, the illustration will focus on the process technology of high thermal conductive and electrical insulating AlN powder, and its application in the crucial industry of high heat-dissipating requirements, such as high power devices or high brightness LED. |
本系統中英文摘要資訊取自各篇刊載內容。