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題名 | 雙層超薄Ru/Ta-Si-C擴散阻障層與銅連導線製程特性探討=Properties of Ultrathin Ru/TaSiC Bi-Layer Diffusion Barrier for Cu Interconnects |
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作者 | 黃孟碩; 王漢瑜; 方昭訓; | 書刊名 | 真空科技 |
卷期 | 25:3 2012.09[民101.09] |
頁次 | 頁33-38 |
分類號 | 448.57 |
關鍵詞 | 銅晶種層; 電鍍銅; 擴散阻障層; 熱穩定性; Cu seed layer; Cu electroplating; Diffusion barrier; Thermal stability; |
語文 | 中文(Chinese) |
中文摘要 | ITRS指出在2016年銅製程阻障層厚度必須降至2 nm,而在降低厚度的同時,阻障層也需具備低電阻率與優良的高溫熱穩定性,且能阻擋銅擴散到矽基材產生銅矽化合物。為因應階梯覆蓋性,以電鍍製程製備銅金屬層為另一發展重點趨勢。本研究在矽基板上濺鍍沉積超薄非晶質Ru/Ta-Si-C阻障層,再以電鍍製備Cu/Ru(1.6180 nm)/Ta-Si-C(1.4 nm)/Si多層結構,經熱處理後探討其熱穩定性。實驗以四點探針(FPP)分析電性、X光繞射分析儀(XRD)進行結構分析、掃描式電子顯微鏡(SEM)觀察表面形貌、穿透式電子顯微鏡(TEM)觀察薄膜橫截面,並以附著力測試檢視薄膜與基板之附著性。分析結果顯示Cu/Ru(1.6 nm)/Ta-Si-C(1.4 nm)/Si多層結構失效溫度為700°C/5分鐘。 |
英文摘要 | Cu thin film prepared by electroplating process is very promising to improve the step coverage for Cu interconnents. This study therefore aims to prepare ultrathin amorphous Ta-Si-C barrier and Ru seed layer on Si substrate, and Cu/Ru(1.6 nm)/Ta-Si-C(1.4 nm)/Si stacked film was prepared by subsequently electroplating Cu thin film. The failure mechanism and the thermal stability were discussed thereafter. Characterics of the films were analyzed by four points probe (FPP), x-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Scotch tape test. The result showed the Cu/Ru(1 nm)/Ta-Si-C(1 nm)/Si stacked film has a failure temperature of 700°C/5 min. |
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