查詢結果分析
相關文獻
- Investigation on Both Chemical Composition Distribution and Morphological Structure of Thermal Gd-oxide
- 表面回應方法在絕緣閘雙極性功率電晶體元件靜態特性之最佳化設計
- Effects of N-Type Shallow Implantation Depletion Layer Width on the Breakdown Voltage of a Schottky Barrier Diode Fabricated on P-Type Substrate
- High-Breakdown Characteristics of the InAlAsSb/InGaAs/InP Heterostructure Field-Effect Transistor
- 避雷器的洩漏電流試驗
- 鈦酸鍶陶瓷變阻器之高崩潰電壓應用研究
- 接地線裡的洩漏電流檢討
- 護具、絕緣手套洩漏電流試驗
- 絕緣油流動帶電分析與改善
- 鹽霧污染對礙子絕緣特性之影響
頁籤選單縮合
題名 | Investigation on Both Chemical Composition Distribution and Morphological Structure of Thermal Gd-oxide=基於熱氧化法之釓氧化物的化學組成分佈及結構形態之研究 |
---|---|
作者 | 王嘉安; 黃琪聰; 柯鴻禧; 胡永柟; | 書刊名 | 中正嶺學報 |
卷期 | 41:1(A) 2012.05[民101.05] |
頁次 | 頁7-17 |
分類號 | 448.5 |
關鍵詞 | 釓; X射線光電子能譜; 崩潰電壓; 洩漏電流; Gadolinium; X-ray photoelectron spectrometry; Breakdown voltage; Leakage current; |
語文 | 英文(English) |
中文摘要 | 本研究以600-900 oC氧化條件做為探討氧化溫度對釓的擴散,以及堆積層氧化物內部的氧和矽原子的交互作用行為之影響。三種主要的原子:釓、氧和矽的縱深分佈利用X射線光電子能譜(XPS)量測,得到三種原子於不同縱深分佈之原子百分率濃度與氧化溫度存在著相依關係。其中以900 oC氧化溫度下,可使100Å厚度的釓原子氧化更完全。經由X -射線繞射圖譜儀量測結果發現,氧化釓薄膜具有立方、四角形、正交和單斜的結構且對應到七個晶相。利用n&k分析儀,量測釓氧化物的能隙介於4.65至7.04 eV。由量測所獲得釓氧化物薄膜的崩潰電壓介於-6.5至-18.5 V,且在-1V的偏壓下,最大洩漏電流密度均在10-7 A/cm2以下。關鍵詞:釓,X射線光電子能譜,崩潰電壓,洩漏電流 |
英文摘要 | This study considers the effect of oxidation temperature, 600 to 900 oC in our experiments, on the diffusion of Gd, and the reactive behavior of oxygen and silicon atoms in interior stacked layers of oxide. From the depth distribution profiles of three kinds of atom Gd, O and Si , measured by X-ray photoelectron spectrometry (XPS), the 900 oC sample with 100Å thickness of Gd metal was completely oxidized. The X-ray diffraction (XRD) patterns of the thermal Gd-oxide (Gd2O3) films reveal that they have cubic, tetragonal, orthorhombic and monoclinic structures and with the seven corresponding crystalline phases. The energy gap of Gd-oxides was measured by n&k analyzer and their values were 4.65~7.04eV under the wavelength of 550 nm. The breakdown voltage of Gd-oxides was -6.5~-18.6 Volts for different oxidation samples. In addition, the leakage current density was bellow 10-7 A/cm2 for bias -1 Volt. |
本系統之摘要資訊系依該期刊論文摘要之資訊為主。