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題名 | 以純銅進行電解拋光平坦化之研究=The Study on Planarization of Copper Materials by Electrolytic Polishing |
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作者姓名(中文) | 黃仁清; 詹益峰; 陳銘震; | 書刊名 | 東南學報 |
卷期 | 35 2010.07[民99.07] |
頁次 | 頁55-64 |
分類號 | 472.17 |
關鍵詞 | 電解拋光; 銅; 平坦化; 電解液; Electrolytic polishing; Copper material; Planarization; Electrolyte; |
語文 | 中文(Chinese) |
中文摘要 | 摘 要 利用電解拋光的技術可增進銅材料化學機械研磨的效能。而電解拋光的過程中, 電解拋光液組成及操作參數,皆為影響平坦化能力的關鍵因素。本文首先以原子力顯 微鏡(AFM)量測經機械拋光後之銅塊材的表面形貌與表面粗糙度,且在實驗溶液主成 分磷酸(85 wt%)中,添加不同比例的甘油,在鈍化區之電位作用的範圍裡進行電解拋 光。而電解拋光後再以原子力顯微鏡(AFM)量測其表面形貌與表面粗糙度,並比較銅 塊材進行電解拋光後的表面形貌的差異。實驗後發現銅材料在純磷酸溶液中電解拋光 後,表面粗糙度明顯降低由原本的6.921nm (Ra)降低至0.820nm (Ra),而隨著電解拋光 時間的增加,平坦化越明顯,這些現象在不同電解液配方皆會出現,亦說明電解拋光 是銅材料平坦化製程的良好加工方式。 |
英文摘要 | ABSTRACT The use of electrolytic polishing technology can enhance the performance of copper materials of chemical mechanical polishing. The electro-polishing solutions and working conditions were key points to affect the ability of the planarization. First, the surface morphologies and roughness were analyzed by atomic force microscope (AFM) after mechanical polishing. Subsequently, the sample was polished by electrolytic polishing, and the principal components of electrolytic polishing solution was phosphoric acid (85 wt %H3PO4), and different proportions of glycerol. After electrolytic polishing, an atomic force microscope was used to measure the surface morphology and surface roughness, and compare the copper block material for electrolytic polished surface morphology differences. It is obvious that the roughness decreases from 6.921nm to 0.820nm after electrolytic polishing in H3PO4 solution. When the electrolytic polishing time increases, the ability of the planarization improved. We determine that the electrolytic polishing processing method is a reasonable to flatten copper materials. |
本系統之摘要資訊系依該期刊論文摘要之資訊為主。