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題 名 | 適於三維晶片黏合前實施的穿矽孔測試技術=On-Chip TSV Testing for 3D IC before Bonding |
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作 者 | 陳柏源; 周永發; 蒯定明; 吳誠文; | 書刊名 | 電腦與通訊 |
卷 期 | 132 2010.04[民99.04] |
頁 次 | 頁94-102 |
專 輯 | 環構計畫技術平臺技術專題 |
分類號 | 448.57 |
關鍵詞 | 三維積體電路; 連接線測試; 感測放大器; 穿矽孔; Three-dimensional integrated circuit; 3D IC; Interconnection test; Sense amplifier; Through silicon via; TSV; |
語 文 | 中文(Chinese) |
中文摘要 | 穿矽孔是三維積體電路最重要的元件之一,因為它構成晶片與晶片之間的垂直連線。但是它的兩端唯有在晶片黏合之後才會完整地連結,因此,一般以為直到此時才得以測試,無法在晶片黏合之前預知穿矽孔是否良好。本文中我們提出一個全新的策略,專門用來測試在晶片黏合之前的穿矽孔。此策略借用動態記憶體(DRAM)常用的感測放大技術來執行晶片中穿矽孔的監控。我們運用其固有的電容特性,可以用很少的面積就可以偵測出待測電路中錯誤的穿矽孔。 |
英文摘要 | Through silicon via (TSV) is one of the most important devices for 3D ICs to enable vertical interconnection among stacking layers. Because two ends of a TSV are completely connected only after bonding, it is often thought that there is no way to monitor the quality of TSV before bonding. We present a novel TSV testing scheme by performing on-chip monitoring before bonding, using a sense amplification technique that is commonly seen in a dynamic random access memory (DRAM) circuit. By virtue of the inherent capacitive characteristics, faulty TSVs can be detected with little area overhead for the circuit under test. |
本系統中英文摘要資訊取自各篇刊載內容。