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題 名 | Properties of ITO Transparent Conducting Films Grown by Sputtering at Room Temperature=室溫濺鍍氧化銦錫透明導電膜之性質 |
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作 者 | 鄭錫恩; 賴忠和; 黃建龍; | 書刊名 | 南臺學報 |
卷 期 | 34:4 2009.12[民98.12] |
頁 次 | 頁11-15 |
分類號 | 448.5 |
關鍵詞 | 透明導電膜; 氧化銦錫; 濺鍍; 結構性質; Transparent conducting film; ITO; Sputtering; Structural properties; |
語 文 | 英文(English) |
中文摘要 | 本研究以直流濺鍍法在室溫下成長氧化銦錫(ITO)透明導電膜,探討靶材-基板間距、濺鍍壓力及基板傾斜角 度等濺鍍參數對鍍膜性質的影響。結果顯示在低壓、低傾斜角與低靶材-基板間距時,室溫下即可獲得高緻密度、 高結晶性、高導電率與良好光學穿透率的ITO 鍍膜。鍍膜的優先成長方向與濺鍍原子的入射角度及能量有密切 關係,在高能撞擊下只有ITO(100)面較能承受,因此鍍膜呈現(100)優選方向。藉由增加基板傾斜角度,鍍膜成長 優選方向會由(100)轉為(111),本文對鍍膜優選方向的形成機構有詳細探討。 |
英文摘要 | Indium-tin-oxide (ITO) films were grown by DC sputtering at room temperature. The effects of target-substrate distances, sputtering pressures, and substrate inclination angles on the film properties were investigated. The results show that optimum film quality occurs at a deposition condition of short target-substrate distance, low pressure, and normal incidence. At such a condition, the deposited films are dense, smooth, and crystalline, with a preferred orientation of (100). The preferred orientation was found related to the energy and direction of incident material flux. Under a high energy bombardment, only those crystals with (100) planes facing the incident flux can survive. As the substrates were at the normal position, the deposited ITO films were with (100) preferred orientation. As the substrates were tilted, the preferred orientation changed from (100) to (111) with the increase of substrate inclination angle. |
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