查詢結果分析
來源資料
頁籤選單縮合
題名 | 以射頻磁控濺鍍法調控氫含量以製備氧化鋅透明導電薄膜=Hydrogen Modifications to Zinc Oxide TCO Thin Film Growth Behaviors by Radio-frequency Magnetron Sputtering |
---|---|
作者姓名(中文) | 林信翰; 余王傑; 侯文棋; 洪昭南; 傅勣惺; | 書刊名 | 真空科技 |
卷期 | 24:2 2011.06[民100.06] |
頁次 | 頁25-32 |
分類號 | 448.59 |
關鍵詞 | 射頻磁控濺鍍法; 氧化鋅; 透明導電膜; 氫摻雜; Radio-frequency magnetron sputtering; Zinc oxide; ZnO; Transparent conductive oxide; TCO; |
語文 | 中文(Chinese) |
中文摘要 | 本研究於室溫下以射頻磁控濺鍍法成長摻雜氫之氧化鋅透明導電薄膜,並探討薄膜中氫含量以及薄膜沉積壓力對氧化鋅薄膜微結構與導電特性的影響。在蒸鍍氧化鋅時,提升氣相中氫的濃度,可增加薄膜的導電度。然而,在高壓的環境下成長氧化鋅有利於形成垂直基板之柱狀結晶,並於低鍍膜壓力下 (<3×10-4 Torr) 形成均勻之奈米晶體顆粒。當氧化鋅薄膜在40% 氫含量及壓力 2mtorr 環境下成長時,可見光透光率在 80 以上,電阻率可達 8.79×10-4Ω-cm。而藉由 X 光繞射結果分析,在氧化鋅鍍膜時加入氫氣造成導電度增加的原因,主要由薄膜中摻雜的氫所造成,而非由薄膜中的氧空缺所導致。 |
英文摘要 | In this work, hydrogen-doped zinc oxide fi lms were deposited at room temperature by radiofrequency magnetron sputtering process as transparent conductive fi lms. The effects of hydrogen dopant in the film and deposition pressure on the microstructure, transparency and electrical properties of films were studied. The increase of H2 concentration in the gas during deposition increases the electrical conductivity of ZnO fi lm. At a high deposition pressure, large columnwise crystallites vertical to the substrate tended to be grown. At a low pressure (<3×10-4 Torr), a uniform size of nanocrystallites were grown. For the film deposited at 40% H2 and at 2 mtorr, the light transmittance was higher than 80% and the electrical resistivity was as high as 8.79×10-4Ω-cm. The analysis of X-ray diffraction results indicated that the increase of fi lm conductivity by increasing H2 concentration was due to the increase of H dopant concentration in the fi lm, instead of the increase of oxygen vacancy concentration. |
本系統之摘要資訊系依該期刊論文摘要之資訊為主。