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題名 | 氧化劑對銅/鉭電偶於化學-機械拋光下之加凡尼行為的影響=Effect of Oxidizer on the Galvanic Behavior of Cu/Ta Coupling during Chemical-Mechanical Polishing |
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作者 | 潘思蓉; 陳瑞琴; 蔡文達; | 書刊名 | 防蝕工程 |
卷期 | 21:4 2007.12[民96.12] |
頁次 | 頁307-313 |
分類號 | 440.39 |
關鍵詞 | 加凡尼電流; 化學機械拋光; 氧化劑; 銅; 鉭; Galvanic current; Chemical-mechanical polishing; CMP; Oxidizer; Copper; Tantalum; |
語文 | 中文(Chinese) |
中文摘要 | 本研究探討於0.01 M Na₂SO₄+1 wt% Al2O3研磨液中添加不同氧化劑(H₂O₂、KIO₃和Fe(NO₃)₃)對銅/鉭電偶加凡尼行爲的影響。在靜置及化學-機械拋光(CMP)情況下,量測未偶合之銅、鉭的開路電位及銅/鉭電偶之加凡尼電流,以瞭解氧化劑所扮演的角色。結果顯示:Fe(NO₃)₃較H₂O₂和KIO₃更能有效的提升鉭的鈍化,並導致銅和鉭之間極性的轉換。本研究亦探討銅/鉭面積比對電偶的加凡尼電流之影響。結果顯示:在添加Fe(NO₃)₃氧化劑之研磨液中,銅/鉭面積比爲5:1時鉭是陽極,而當面積比爲1:1時鉭轉換成爲陰極。 |
英文摘要 | The effect of oxidizer addition, namely H₂O₂, KIO3 and Fe(NO₃)₃, on the galvanic behavior of the Cu/Ta coupling in 0.01 M Na₂SO₄+1 wt% Al2O3 base slurry was studied. Both open circuit potentials (OCPs) of the uncoupled Cu and Ta as well as galvanic current of the Cu/Ta were measured in static and under chemical mechanical polishing (CMP) condition to analyze the roles of these additives. The results showed that Fe(NO₃)₃ was more effective than H₂O₂ and KIO₃ in promoting the passivation of Ta, which in turn caused the change of polarity between Cu and Ta. The effect of Cu/Ta area ratio on the galvanic behavior of the coupling was also investigated. The results showed that in Fe(NO₃)₃-containing slurry, Ta was the anode with a Cu/Ta area ratio of 5:1, but became the cathode with an area ratio of 1:1. |
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