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| 題 名 | 虛擬基板鍺含量對應變矽元件電性影響之研究=Influence of Ge Content in Virtual Substrate on Electrical Characteristics for Strained-Si nMOSFET |
|---|---|
| 作 者 | 林忠雄; 康定國; 吳忠義; 郭正聞; 吳三連; | 書刊名 | 正修學報 |
| 卷 期 | 20 2007.11[民96.11] |
| 頁 次 | 頁51-65 |
| 分類號 | 448.552 |
| 關鍵詞 | 應變矽; 矽鍺; 矽鍺虛擬基板; Strained-Si; SiGe; SiGe virtual substrate; |
| 語 文 | 中文(Chinese) |
| 中文摘要 | 本論文將伸張形變N通道金氧半場效電晶體製作於新穎的多層磊晶層上,並針對不同虛擬基板鍺含量對應變矽元件電特性影響之探討。成長新穎多層結構基板目的在於減少矽鍺緩衝層的厚度,以及更進一步地降低這一層所帶來的缺陷密度,將缺陷侷限在緩衝層內。由實驗的結果顯示出當具有較高鍺含量可使載子在通道傳輸時被侷限在形變層內,此外,對臨界電壓、次臨界擺幅等電性與不同閘極長度之關係亦給出系統化的討論。 |
| 英文摘要 | In this paper, tensile strained-Si n-type metal-oxide-semiconductor field-effect transistors (MOSFETs) grown on a novel multi-layer structure where the Ge contents of SiGe virtual substrate are 15%, 20% and 28% respectively. A multi-layer structure is used to confine the threading dislocation formation around the bottom layer and reduce the top buffer thickness with the low-defect surface. Experimental results show that the devices with higher Ge content exhibit excellent properties due to the better carrier confinement. In additional, we give a systematic study of the relations between threshold voltage, subthreshold swing and different gate length. |
本系統中英文摘要資訊取自各篇刊載內容。