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題 名 | 銅製程中之阻障層=Barrier Layers in Cu Metallization |
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作 者 | 陳麗梅; 王朝仁; | 書刊名 | 化工資訊月刊 |
卷 期 | 14:2 2000.02[民89.02] |
頁 次 | 頁30-35 |
專 輯 | IC-CU專題 |
分類號 | 448.5 |
關鍵詞 | 銅製程; 阻障層; |
語 文 | 中文(Chinese) |
英文摘要 | With the increasing demand on high performance devices, copper will gradually become the main on-chip conductor for all types of integrated circuits (ICs). In addition to the copper deposition playing an important role in damascene process, the related barrier layer and low dielectrics are critical for process integration. This article discusses the requirements for barrier layers in damascene process. |
本系統中英文摘要資訊取自各篇刊載內容。