頁籤選單縮合
題名 | 應用於覆晶式紫外光發光二極體之低電阻、高熱穩定及高反射歐姆接觸電極之研究=Low Resistance, High Optical Reflectivity and High Thermal Stability Ohmic Contacts Applied for Flip-Chip Ultraviolet Light-Emitting Diodes |
---|---|
作者姓名(中文) | 潘昌吉; 陳冠廷; 陳銘勝; 方啟鑫; 綦振瀛; | 書刊名 | 光學工程 |
卷期 | 90 民94.06 |
頁次 | 頁1-9 |
分類號 | 448.533 |
關鍵詞 | 氮化鎵; 覆晶式紫外光發光二極體; 歐姆接觸; GaN; Flip-chip ultraviolet light-emitting diodes; Ohmic contact; |
語文 | 中文(Chinese) |
中文摘要 | 我們已開發適合應用於覆晶式外光發光二極體(flip-chip ultraviolet light-emitting diodes)之歐姆接觸電極;具有低電阻,高熱穩定以及高光反射等優越特性。在n型歐姆接觸電極研究方面,Ti/WSI0.05/Ti/Au於氮氣環境下800℃、3分鐘熱處理後,可得低特徵電阻率約1×10-6Ωcm2,經高溫300℃、96小時之熱穩定性測試結果,特徵電阻率幾乎維持不變,而傳統之Ti/Al/Ti/Au n型歐姆接觸電極之特徵電阻率則嚴重劣化,其在光反射率之表現上(350~450mm),Ti/WSI0.05/Ti/Au相較於傳統之Ti/Al/Ti/Au歐姆接觸電極可有兩倍以上之改善。另外,在p型即歐姆接觸電極研究方面,Pd/Ni/Al/Ti/Au於150℃,氮氣環境下經48小時之熱處理後,其特徵電阻率約小於2×10-2Ω-cm2,並無明顯之電極劣化情況,且在370nm之光反射率之表現上,熱處理之後的Pd/Ni/Al/Ti/Au電極,其反射率呈大幅之提升(>76%),根據二次離子質譜之量測分析(secondary ion mass spectroscopy, SIMS),發現Ni金屬層能更有效地阻擋Ti金屬向下擴散至p型氮化鎵(p-type GaN)表面。 |
英文摘要 | Low contact resistance, high reflectivity and high thermal stability multilayer ohmic contacts to n and p-type GaN for flip-chip ultraviolet light-emitting diodes have been demonstrated. For n-type ohmic contacts, specific contact resistively low as low as 1× 10-6Ω-cm2 is obtained using a metallization scheme of Ti/WSi0.05/Ti/Au(20/40/20200nm) after thermal annealing at 800℃ for 3min in N2 ambient. Its specific contact resistively maintains at the same level after heat treatment at 300℃ for 96 hours. Its optical reflectivity in the wavelength range of 350 to 450nm is about twofold higher than that o the conventional Ti/Al/Ti/Au(30/100/40/120nm) contact. The former also exhibits much smoother surface and better edge acuity, which is essential for devices sensitive to critical dimension control. For p-type contacts, Pd/Ni/Al/Ti/Au contact is able to retain its specific contact resistibility(<2×10-2Ωcm-2) and reflectivity(>76%) after a long-term annealing at 150℃ in nitrogen ambient. According to the secondary ion mass spectroscopy study, it is the Ni layer that prevents the penetration of Ti into GaN during thermal treatment and improves the thermal stability. |
本系統之摘要資訊系依該期刊論文摘要之資訊為主。