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題名 | Simulation with a Multi-MOS Model for Power Semiconductor Devices=多數金氧半導體模型用於高能元件之模擬 |
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作者 | 高家雄; 曾俊傑; 李豐明; 沈征; | 書刊名 | 華岡工程學報 |
卷期 | 18 2004.06[民93.06] |
頁次 | 頁1-9 |
分類號 | 448.552 |
關鍵詞 | 金氧半導體; 高能元件; 絕緣閘極雙載子電晶體; 電流感應器; Power semiconductor devices; Integrated IGBT; Current sensors; SPICE3; Multi-MOS model; Equivalent circuit model; |
語文 | 英文(English) |
中文摘要 | 在半導體物理中電子和電洞濃度依其位點而有變動的現象是顯而易見的事. 然而, 目前已有的分析模型幾乎都不考慮這個問題, 因此無法分辦活動性, 雙載子電晶體, 和金氧半導體(MOS)之間的不同. 本文建構了一個結合多個MOS的新等效電路模型來模擬絕間極雙載子電晶(IGBT)電流感應器. 本模型可以同時考慮IGBT內電子和電洞電流, 以及MOS內摻雜濃度的變化. 本模擬利用SPICE3的演算模擬三種電流感應器, 也則活動性, 雙載子電晶體, 和金氧半導體的電性, 所得的結果與電流感應測試結果也相當吻合. |
英文摘要 | Both electron and hole concentrations vary within the semiconductor physics. However, most analytical models existing today do not consider this problem, thus fail to distinguish between the active, bipolar, and MOS structure. In this paper a new equivalent circuit model is constructed within a multi- MOS model for simulation of IGBT (Insulated Gate Bipolar Transistor) current sensors. It takes into account both electron and hole currents in IGBTs and the doping variation in MOS body. The simulation is conducted with SPICE3 for three types of current sensor, namely active, bipolar, and MOS current sensors. The results agree well with the current sensing measurement. |
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