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題名 | In-Situ Micro Strain Gauges for Measuring Residual Strain of Three CMOS Thin Using Only One Maskless Post-Processing Step=僅以一道無光罩後製程完成量測三層CMOS薄膜殘留應變之現地微應變規 |
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作者姓名(中文) | 戴慶良; 張培仁; | 書刊名 | 中國工程學刊 |
卷期 | 20:5 1997.09[民86.09] |
頁次 | 頁539-548 |
分類號 | 448.5 |
關鍵詞 | 互補式金氧半導體; 薄膜; 殘留應變; CMOS; Thin film; Residual strains; |
語文 | 英文(English) |
中文摘要 | 利用標準CMOS製程製作了指針型微應變規、微應變規可以被用以量測薄膜的殘留 應變。我們製作了一塊型微應變規晶片,晶片上含有三種微應變規,此晶片只需一道共同的 後製程處理,就可得到三種微應變規,可用以量測三種不同CMOS薄膜材料的殘留應變。在後 製程處理時,不需要光罩,只需要一道濕蝕刻,磷酸被用以蝕刻犧牲層。最後,CMOS薄膜的 殘留應變測試結果,顯示了氮化矽是1.6655x10□、氧化矽是-2.6675x10□(壓)、鋁是- 0.5105x10□(壓)。 |
英文摘要 | The implementation of pointer-type micro strain gauges requires the use of standard CMOS process (Complementary Metal Oxide Semiconductor). To determine residual strain of thin films, micro strain gauges play a part in the process. By using an identical post-processing on the same chip, we are able to obtain three kinds of micro strain gauges of which their usage can measure residual strain of three distinct CMOS thin film materials. The mask-less post-processing requires only wet etching. Phosphoric acid is ideal to perform the etching of sacrificial layers. Finally test results of residual strains for CMOS thin films of silicone nitrate, silicon dioxide (compression), and aluminum (compression) are 1.6655x10□, - 2.6675x10□ and -0.5105x 10□ respectively. |
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