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題名 | 以光反射調製光譜研究SIN狇結構之nIGaAlAs之費米能階 |
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作者姓名(中文) | 王瑤池; 謝觀峻; 張廷桓; 歐陽嶽; 徐建興; | 書刊名 | 黃埔學報 |
卷期 | 45 2003.10[民92.10] |
頁次 | 頁277-286 |
分類號 | 343.16 |
關鍵詞 | 光反射調制光譜; 能隙; 電場; 費米能階; Quaternary alloy; Photoreflectance; Fermi level; Energy gap; |
語文 | 中文(Chinese) |
中文摘要 | 本實驗利用分子束磊品(MBE)成長技術,成長一系列(In0.52AI0.48As)x(In0.52Ga0.48As) 1-x/InP的SIN+ (Surface-intrinsic-n+)異質結構的樣品(x從0變化到1),利用光反射調制光譜(Photoreflectance, PR)技術測量樣品的能隙(Eg)隨InAlAs的濃度 (x)之變化關餘,其結果為Eg=0.723+0.65 5x+0.094x2。並利用PR 測量各樣品表面電場的大小(Fs)及費米能階(Ef)在表面釘扎的位置,發現表面費米能階並未釘扎在半能隙上,這結果與一些異質結構之半導體如GaAs、InGaAs、AlGaAs不一樣,但是與InAlAs有同樣之現象。 |
英文摘要 | In this paper, we utilize the photoreflectance (PR) technique to study the quaternary system (Ino.52Alo.48As)x(Ino.52Gao.48As)1-x/InP for O<x<l which were grown by conventional molecular beam epitaxy (MBE) in surface intrinsic structure(SIN+). A typical growth sequence entailed a 1000Å thick (In0.52Al0.48As)x(In0.52Ga0.48As)1-x undoped layer being grown on 1μm of Si-doped, n-type (In0.52Al0.4sAs h(In0.52Ga0.4SAs) 1-x buffer layer which has been previously grown Fe-doped semi-insulated InP substrate. This structure is named surface-intrinsic-N+ (SIN+). The samples of built-in electric fields (F) are measured from the Franz-Keldysh Oscillations (FkOs), and the surface Fermi level (Ef) would be decided from the values of electric field. We find the surface Fermi level of all samples are weakly pinned in the gap which similar to GaAs and InGaAs. We can also obtain the energy gap of all samples form the PR spectroscopy. The result is Eg=0.723+0.655x+0.094x2. |
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