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題 名 | A Study of Residual Stress and Microstructure of Large and Thick Diamond Films Prepared by MPCVD=大面積厚鑽石膜殘留應力與微結構之研究 |
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作 者 | 黃宏欣; 洪敏雄; | 書刊名 | Proceedings of the National Science Council : Part A, Physical Science and Engineering |
卷 期 | 22:1 1998.01[民87.01] |
頁 次 | 頁48-54 |
分類號 | 440.34 |
關鍵詞 | 鑽石膜; 殘留應力; 微結構; Heat sink; Internal stress; Diamond films; MPCVD; |
語 文 | 英文(English) |
中文摘要 | 鑽石集各種優異性質於一身,可應用於電子、耐磨耗及光學等方面。鑽石同時具 最高熱傳導率、低介電常數及電的絕緣性,極適合應用於電子構裝上,作為模組之散熱板。 以微波電漿化學氣相沉積法製備鑽石膜於矽基板,可藉由調整實驗參數及配置,加大沉積面 積到 20 × 20 mm �插A以 X 光繞射、拉曼分析,鑽石品質如同小面積成長一般;其成長速 率為 0.5 μ m/hr。以 X 光繞射分析,鑽石膜之優先取向為( 220 ),以哈里士法分析, ( 220 )面之 TC 值為( 111 )之 3 倍多,且隨時間增加而持續增加。 鑽石膜經長時間 成長於矽晶片上, 其殘留應力呈現漸減趨勢, 由沉積 10 小時之 2.4 GPa 漸減至成長 52 小時之 1.24 GPa; 殘留應力之減少可能先沉積之鑽石膜受到後來沉積溫度之退火,而使膜 中殘留應力遞減; 而鑽石膜表面粗糙度由成長 10 小時之 0.03 μ m 則隨沉積時間而漸增 ,但成長 52 小時之後,鑽石膜之表面粗糙度依然低於 0.2 μ m。 由以上研究可知,鑽石 膜適合應用於電子構裝上, 經長時間成長,以( 220 )為優先取向,而殘留應力隨時間增 加而遞減,表面粗糙度雖然漸增,但成長 52 小時後依然低於 0.2 μ m。 |
英文摘要 | Diamond films are attractive for many applications due to their superior properties. There is potential for diamond films to be used as a heat sink in electronic packaging applications. The microstructure and residual stress of diamond films prepared by microwave plasma enhanced chemical vapor deposition (MPCVD) were studied for long term deposition. For multichip modules (MCM) heat sink application, the deposition area of diamondfilms deposited by MPCVD was enlarged to 20×20 mm�慨ear the limit of the plasma zone in these studies. The quality of diamond films was analyzed by the X-ray diffractometer, Raman scattering and SEM. The growth rate of diamond films were 0.5 μm/hr. As determined by X-ray diffraction analysis, the preferred orientation of diamond films is (220). According to the Harris method analysis, the texture coefficient of (220) increased with the deposition time when diamond films were continulusly deposited. The residual stress of diamond films decreased with the deposition time from 2.4 GPa for 10 hours of deposition to 1.24 GPa for 52 hours of deposition. For long term deposition, diamond films were annealed at deposition temperature might reduce the residual stress. The roughness of diamond films increased with the deposition time from 0.03 μm for 10 hours of deposition to 0.15 μm for 52 hours of deposition owing to brain growth. |
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