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題 名 | Temperature Uniformity in Rapid Thermal Processor by Inverse Modeling=以逆向模式分析快速熱製程之溫度均勻性 |
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作 者 | 林森溥; 曲新生; 林振森; 曹仁杰; | 書刊名 | 聯合學報 |
卷 期 | 18 2001.05[民90.05] |
頁 次 | 頁1-14 |
分類號 | 460.02 |
關鍵詞 | 十二吋矽晶圓; 逆向模式; 快速熱製程; 溫度均勻性; 12-in silicon wafer; Inverse modeling; Rapid thermal processing; Temperature uniformity; |
語 文 | 英文(English) |
中文摘要 | 本文提出一種逆向模式之數值演算法以便能評估計算快速熱製程中使得十二吋晶 圓上溫度均勻所需的最佳照射熱通量。本文係以矽為晶圓材料,考慮晶圓熱物理性質隨溫度 而變化,並採用二維模式及含未來時間演算法的逆解熱傳方法。結果顯示,晶圓上溫度均勻 所需的照射熱通量可直覺地、有效地經由此逆向模式評估計算出來。假若快速加熱系統能根 據此逆向方法來動態控制晶圓上照射的熱通量,本文顯示晶圓上溫度的不均勻性將大大地降 低。 在過程中,最大的溫差僅有 0.674 ℃;若加進因溫度控制而產生之± 0.7728 ℃至± 3.864 ℃的溫度量測誤差,過程中最大的溫差分別僅有 0.673 ℃和 0.582 ℃。 |
英文摘要 | A numerical inverse-modeling algorithm was developed in this article which was able to calculate optimal incident heat fluxes on 12-inch wafer sequentially during intensity mode of rapid thermal processing to obtain temperature uniformity across the wafer. A two-dimensional thermal model, temperature-dependent thermal properties of silicon, and a future-time algorithm of inverse heat-transfer method are used. The required incident-heat-flux profiles for maintaining temperature uniformity across 12-inch (0.775-mm-thick) silicon wafer were intuitively evaluated using inverse modeling. Our numerical results show that temperature uniformity can be efficiently achieved using inverse modeling and reveal that the temperature non-uniformity can be reduced considerably if the incident heat fluxes on the wafer can be dynamically caontrolled according to the inverse results. The resulting maximum temperature difference is only 0.674 ℃. Effects of successive temperature measurement errors of ± 0.7728 ℃ and ± 3.864 ℃ on temperature uniformity are discussed. The maximum temperature differences in the present study are only 0.673 ℃ and 0.582 ℃, respectively. |
本系統中英文摘要資訊取自各篇刊載內容。