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題 名 | 空乏蝕刻高壓二極體接面電場之計算機模擬 |
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作 者 | 卓信誠; | 書刊名 | 技術學刊 |
卷 期 | 3:2 1988.06[民77.06] |
頁 次 | 頁135-140 |
分類號 | 448.53 |
關鍵詞 | 二極體; 空乏; 高壓; 接面; 電場; 蝕刻; |
語 文 | 中文(Chinese) |
中文摘要 | 在製造高壓二極體中,必讀對它的接面電場問題做適當的處理。本論文主要發展空乏區蝕刻技術 (DEM),即是將高濃度擴散邊空乏區的部份區域蝕刻掉,以減少半導體的表面電場,以得到極高的崩潰電壓。根據二極體被蝕刻後的形狀,提出一模型,並用計算機詳細計算,得到各點的電壓,電場分佈,以便跟實驗值作一比較,結果兩者均顯示,祇要精確地控制蝕刻深度,便可得到更高的崩潰電壓,並證明是一種很優良的技衛,實是將來製造高壓電晶體和高壓矽控制流器的基礎。 |
英文摘要 | In order to fabricate high breakdown voltage diodes, the junction field must be properly controlled. This paper deals with a new junction termination geometry which can reduce the surface field and achieve a high breakdown voltage in the junction. The new method is termed the depletion etch method (DEM). It consists of a partial etch into a heavily doped side of the junction of a small region extending beyond the contact after the device is processed by mesa etch. A model of a new junction termination geometry is proposed for computer program calculation.' By using this model, the exact numerical two-dimentional electrical potential and electric field calculations can be obtained everywhere. Both the calculations and the experimental results show that a higher breakdown volage can be achieved if the etch depth is controlled with sufficient precision. The fabricating processes developed in this study are believed to be improtant for fabricating high power devices in the future. |
本系統中英文摘要資訊取自各篇刊載內容。