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題名 | The Effectiveness of Aluminum Mask for Patterning Semi-Insulating Regions on Si Wafer under MeV Proton Bombardment=在百萬電子伏特之質子照射下於矽晶片上使用鋁罩局部形成半絕緣體之有效性 |
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作者姓名(中文) | 李隆盛; 李崇仁; 鄧瑞理; 楊清田; 林立夫; | 書刊名 | Proceedings of the National Science Council : Part A, Physical Science and Engineering |
卷期 | 24:4 2000.07[民89.07] |
頁次 | 頁306-309 |
分類號 | 448.5 |
關鍵詞 | 質子照射; 矽晶片; 鋁罩; 半絕緣體; Proton bombardment; RF IC; Mask; Junction leakage; Flatband shift; Annealing; |
語文 | 英文(English) |
英文摘要 | This paper demonstrates that, based on a study of the junction leakage currents of p-n diodes and the capacitance-voltage (C-V) characteristics of metal- oxide-silicon (MOS) capacitors, an aluminum mask can be used to shield against mega-electron-volt (MeV) proton bombardment, which is used to pattern semi- insulating regions on silicon wafers for radio frequency integrate circuits (RF IC) and/or mixed-mode circuits. |
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