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題 名 | 多重能量氫離子佈植砷化鎵超快光電開關性能分析=Ultrafast Multi-Energy Hydrogen-Implanted GaAs Photoconductive Switches |
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作 者 | 林恭如; 許晉嘉; 潘犀靈; | 書刊名 | 真空科技 |
卷 期 | 13:2 2000.07[民89.07] |
頁 次 | 頁29-40 |
分類號 | 337.472 |
關鍵詞 | 單一劑量多重能量質子佈植; 砷化鎵; 超快光電子學; 光電半導體; 多重質子轟擊式砷化鎵; GaAs:H狇; |
語 文 | 中文(Chinese) |
中文摘要 | 我們針對在超快光學與光電子學領域中具有廣泛應用的多重質子轟擊式砷化鎵(GaAs: H+)材料與元件在材料結構、電學與光學方面的特性進行分析。在單一劑量多重能量質子佈植砷化鎵中,其次皮秒載子生命期顯示出可低到350±50fs左右。我們也發現質子(H+)佈植砷化鎵的光導開關(PSC)有較低的暗電流(柵極偏壓10V時15nA),與半絕緣性砷化鎵的PCS相較之下有較高的崩潰電壓(>100kV/cm)。GaAs: H+ PCS的時間響應半高寬約為2ps。我們也首度探討從GaAs: H+中光學激發產生兆赫輻射,其時間響應與光譜帶寬分別為0.7ps與1.25THZ。THZ輻射場強度約為20mV/cm。我們也進一步從THZ的數據分析中推測GaAs: H+的等效載子移動率約略低於1cm2/V-sec。 |
英文摘要 | We have investigated the ultrafast optical and optoelectronic characteristics of multi-energy protonbombarded GaAs(GaAs: H+) material and devices in some detail. Photo-excited carrier lifetimes of GaAs: H+ were observed to be as low as 350±50 fs. Photoconductive switches (PCS) fabricated on GaAs: H+ were found to exhibit lower dark currents (15 nA at a bias of 10 volts) and higher breakdown voltage (>100 kV/cm) than Pcs's fabricated on semi-insulatings (S.1) GaA. The temporal response of the GaAs: H+ PCS was about 2 ps at full-wave half maximum. Optically excited terahertz (THz) radiation from GaAs: H+ was reportreorted for the first time to our knowledge. The temporal response and spectral bandwidth of the emitted THz radiation were 0.7 ps and 1.25 THz, respectively. The field strength of the THz signal was about 20 mV/cm. From the THz data, we are able to deduce that the effective carrier mobility of GaAs: H+ was less than 1 cm2/V-sec. |
本系統中英文摘要資訊取自各篇刊載內容。