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題 名 | 射頻濺鍍織構氮化鈦薄膜對銅與矽之擴散阻礙性質評估=Evaluation of Radio-Frequency Sputtered Textured TiN Thin Films as Diffusion Barriers between Copper and Silicon |
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作 者 | 郭政彰; 陳錦山; | 書刊名 | 真空科技 |
卷 期 | 13:1 2000.03[民89.03] |
頁 次 | 頁4-14 |
分類號 | 440.33 |
關鍵詞 | 射頻濺鍍; 氮化鈦薄膜; 銅; 矽; 擴散阻礙; 積體電路; 導線材料; TiN; |
語 文 | 中文(Chinese) |
中文摘要 | 本研究利用射頻磁控濺鍍系統,在固定的氬分壓與不同氮╱氬分壓比例之混合氣氛(氣壓範圍10-1Pa),分別將鈦(Ti)薄膜沈積在(100)矽晶基材上。同時,綜合沈積速率與片電阻量測、X光繞射分析(XRD)、原子力顯微術(AFM)、掃瞄式電子顯微術(SEM)與能量散佈X光能譜術(EDX)的結果,探討這些Ti與TiN薄膜的表面形態、晶質結構、電性等特徵,以及在矽、銅間的高溫擴散阻礙行為和界面破壞機制。薄膜特性分析的結果發現:氮╱氬分壓比例極低(約0.08)之濺鍍氣氛可沈積(111)織構(Textured)之柱狀晶TiN薄膜。持續增加氮╱氬分壓比率(至0.5)會使TiN薄膜逐漸喪失此(111)優選方位,而於較高的分壓比例(0.63至0.92)沈積(100)優選方位之柱狀晶TiN薄膜。高溫界面反應行為的分析發現:隨著溫度的升高,「Si/(100)TiN/Cu」試片會依序進行以下的表面形態轉變;微小(1至4μm)銅突起顆粒與凹洞的形成、這些顆粒與凹洞的擴張、Cu4Ti3樹枝狀與Cu3Si析出物的產生,最終導致TiN、銅膜與矽基材三者之間彼此反應形成Cu3Si、TiSi和Cu4Ti3,導致Tin/Cu金屬化薄膜相對片電阻值急速上升。經高溫處理後之「Si/(111)/TiN/Cu」試片表面亦呈現相似的破壞行為。但是,因為(111)TiN之柱狀晶具有較寬厚(即具較低晶界密度)與最密堆積平面之特徵,故(111)TiN擴散阻礙層明顯具較高(約100至150℃)之熱穩定性。 |
英文摘要 | Thin films of titanium (Ti) and titanium nitrides (TiN) are deposited on (100) silicon using a radio-frequency generator to sputter a Ti target under different N2-to-Ar pressure ratios. The influence of changing the nitrogen partial pressure, particularly, on evolutions of phase, microstructure and electrical properties of the deposited TiN thin films is characterized by employing resistivity measurement, and scanning electron and atomic force microscopies. (111) prefer-oriented TiN having a magnitude of resistivity approximately 50 μΩ-cm can be deposited under N2-to-Ar pressure ratios ranging from 0.08 to 0.5. However, gradually increasing the pressure ratio subsequently reduces the degree of the (111) texture and, ultimately at ratios greater than 0.63, the poisoned TiN thin films become relatively conductive (~40μΩ-cm) and exhibit a highly (100) preferred orientation. Barrier tests, based on high-temperature annealing Si/TiN (40nm)/Cu metallization samples, suggest that both (111) and (100) TiN diffusion barriers adhere to a similar degradation process by first forming copper-related compounds (Cu4Ti3 and Cu3Si) and late Ti-silicide causing their failures. However, as (100) TiN possessing a finer column-grained structure easily allows copper to penetrate through its grain boundaries, the (100) TiN diffusion barriers yield a poorer thermal stability and degraded barrier performance. |
本系統中英文摘要資訊取自各篇刊載內容。