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題 名 | 快速升溫退火砷離子佈植砷化鎵近能隙能帶吸收光譜之研究=The Absorption Spectrum of Arsenic-ion-implanted GaAs after Thermal Annealing |
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作 者 | 林恭如; 許晉嘉; 潘犀靈; | 書刊名 | 真空科技 |
卷 期 | 13:2 2000.07[民89.07] |
頁 次 | 頁41-46 |
分類號 | 336.5 |
關鍵詞 | 快速升溫退火; 砷離子佈植砷化鎵; 近能隙能帶; 吸收光譜; 傅立葉轉換紅外線光譜儀; RTA; FT-IR; GaAs:As狇; |
語 文 | 中文(Chinese) |
中文摘要 | 我們利用傅立葉轉換紅外線光譜儀(FT-IR)來量測砷離子佈植砷化鎵在近能隙之穿透光譜的穿透係數、吸收係數效應,並藉由微分吸收譜來判定在砷離子佈植砷化鎵(GaAs: As+)中淺層能階上的雜質缺陷及其活化能。此外,利用適合對數據曲線化的吸收曲線A(hv-Eg)1/2或是適合對橫軸的截距加以判斷的(ahv)2曲線,我們進一步發現經快速升溫退火(RTA)後GaAs: As+試片的能隙能量值有的藍位移現象,其對應能隙能量是從1.35eV (Ta=300℃)增加至1.41eV(Ta=800℃)。在近能隙範圍上吸收光譜有微擾現象的情形顯示出在經過RTA之GaAs: As+試片中仍具有大量的近能帶缺陷連續分佈的情形。藉由此衍生雜質的吸收光譜也可顯示出在具有較高退火溫度下樣本中淺層能階缺陷有效減少的情形。 |
英文摘要 | We report the effect of annealing temperature on the near bandgap transmittance, absorption coefficient, as well as the evolution of shallow-level defects of arsenic-ion-implanted GaAs (referred as GaAs: As+) by using Fourier transform infrared spectroscopy. By either fitting the absorption curve with A(hv-Eg)1/2 or extrapolating the (ahv)2 curve to the abscissa, the bandgap energy of RTA-annealed GaAs: As+ samples was found to blue-shift from 1.35 eV to 1.41 eV as the annealine temperature increases from 300℃ too 800℃. The energy states of the dense shallow-level defects which located at near bandgap region indicate in the RTA-annealed GaAs: As+ samples were identified. The evanishment of some defects during high-temperature annealing process was also observed by characterizing the derivative absorption spectra. |
本系統中英文摘要資訊取自各篇刊載內容。