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題 名 | 碳化稻殼在反應區外部氣相生成碳化矽之研究=Formation of SiC in Cold Zone during Carbothermal Reduction of Carbonized Rice Hulls in Reaction Zone |
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作 者 | 韓雄文; 廖學誠; | 書刊名 | 陶業學刊 |
卷 期 | 3:1 1999.01[民88.01] |
頁 次 | 頁44-51 |
分類號 | 440.33 |
關鍵詞 | 碳化稻殼; 熱還原法; 氣相反應; 鬚晶; 氣液固機構; Carbonized rice hulls; Carbothermal reduction; Vapor phase reaction; Whiskers; Vapor liquid solid mechanism; VLS; |
語 文 | 中文(Chinese) |
中文摘要 | 碳化稻殼在1500℃、保持5 x 10 torr真空條件下,經熱還原反應會生成SiC微粉;此外,反應區(高溫區)所產生各種氣體如SiO、CO等,經擴散、對流到反應區外部(冷卻區)時,由於氣相反應作用,在不同溫度的石墨基板上,形成不同型態的沈積物,藉著SEM/EDX、XRD、FTIR、TEM和AES等分析方法,得知在冷卻區1120-1220℃區域,沈積物為Sic鬚晶,係以氣液固機構(vapor liquid solid mechanism, VLS)生成,Fe有加速鬚晶成長功能;在1220-1490℃區域,沈積物為SiC薄膜。此類SiC沈積物為碳化稻殼轉化SiC反應之副產品,應可增加開發稻殼的經濟效益。 |
英文摘要 | The vapor deposited products on the graphite substrates in the cold zone (1120-1490℃) of tube furnace for the synthesis of SiC powders from carbonized rice hulls (CRH) at 1500℃ have been characterized by SEM/EDX, XRD, FTIR, TEM and AES techniques. SiC whiskers (1120-1220℃) and SiC thin film (1220-1490℃) on the graphite substrates have been identified, respectively; its associated Fe element appears to have catalyzed the growth of SiC whiskers by vapor liquid solid mechanism (VLS). Results of this study suggest the feasibility of preparing SiC whiskers and thin film material on the graphite substrates by a chemical vapor deposition process. These by-products, SiC deposits, may increase the commercial benefits of SiC synthesis from CRH. |
本系統中英文摘要資訊取自各篇刊載內容。