查詢結果分析
來源資料
相關文獻
- Modeling of Three-Peak Current-Voltage Characteristics with Two Resonant Tunneling Diodes Connected in Series
- The Numerical Simulation of Composite Resonant Tunneling Diodes for Logic Applications
- 串聯電極式壓電石英晶體感測器之多通道系統於大腸桿菌的總生菌數檢測
- 微量戴奧辛分析的新技術--四極電場離子儲存時間串聯式質譜儀
- Porous Silicon Superlattice Resonant Tunneling Diode
- The Effect of the Non-ideal Mixing on the Number of Steady-State Multiplicities in a Start-up Diagram of Two CSTR's in Series
- Observation of Negative Differential Resistance in a Si/Ge垍Si垎/Boron犻-doped Si Heterostructure
- 串聯補償與穩定器技術之協調應用以改善臺電系統動態特性
- 並聯式機構工具機
- 液相層析串聯質譜儀於結構分析之應用
頁籤選單縮合
題 名 | Modeling of Three-Peak Current-Voltage Characteristics with Two Resonant Tunneling Diodes Connected in Series=負電阻元件之Pspice模型及串聯之電特性分析 |
---|---|
作 者 | 王瑞祿; | 書刊名 | 崑山技術學院學報 |
卷 期 | 1 1998.01[民87.01] |
頁 次 | 頁1-4 |
分類號 | 448.5 |
關鍵詞 | 共振穿透; 負電阻; 串聯; Pspice大信號模型; 線性分段; Resonant tunneling; Pspice large-signal model; Multipeak I-V; Piecewise-linear approximation; |
語 文 | 英文(English) |
中文摘要 | 本報告將討論與分析兩個共振穿透式之負電阻元件串聯後,其電特性可產生三個 負電阻區域之條件,寄生電阻效應對電特性之影響亦是討論重點,利用線性分段之方法 建立負電阻元件之Pspice 大信號模型,利用負電阻元件之串聯可以得到多重之負電阻 區域。 |
英文摘要 | The conditions for three-peak current-voltage (Ⅰ-Ⅴ) characteristics with two discrete resonant tunneling diodes (RTDs) connected in series are discussed and analyzed. With suitable design, one can obtain three-peak Ⅰ - Ⅴ characteristics with two series-connected RTDs, and some equations are derived to help the design. The effect of parasitic resistance on the Ⅰ - Ⅴ characteristics is investigated. Alare-singnal model of the RTD is developed by using the piecewise-linear approximatin technique, and this model can be easily implemented in PSpice. The simulated Ⅰ - Ⅴ curve of the series circuit is in good agreement with the measured results. The results in this paper can be applied to the design of multipeak Ⅰ - Ⅴ curve with less RTD structure in comparison with the traditional device that stacks the same RTDs to obtain a multipeak Ⅰ - Ⅴ curve. |
本系統中英文摘要資訊取自各篇刊載內容。