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題 名 | The Numerical Simulation of Composite Resonant Tunneling Diodes for Logic Applications=應用於邏輯方面的複合式共振穿透二極體之數值模擬 |
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作 者 | 汪楷茗; 傅湊宗; 王水進; | 書刊名 | 吳鳳學報 |
卷 期 | 5 1997.06[民86.06] |
頁 次 | 頁62-70 |
分類號 | 448.552 |
關鍵詞 | 共振穿透二極體; 複合式共振穿透二極體; 多值邏輯; 負電阻; Resonant tunneling diode; Composite RTDs; Multiple-valued logic negative differential resistance; |
語 文 | 英文(English) |
中文摘要 | 本論文係針對複合式共振穿透二極體(RTD)之多重負電阻的電流-電壓特性作理論 研究。 利用組合二或多個雙位障 RTD 為垂直積體化或串、並聯型式,可得多重負電阻特性 。 首先,我們以一自洽數值方法模擬單一雙位障 RTD 之負電阻特性。其次,以此資料並基 於電路的觀點, 發展一簡單、有效率之數值方法,來模擬、分析複合式 RTD 多重負電阻之 電特性。所得計算結果與實驗資料之誤差亦在合理範圍內。最重要的是,利用此方法,我們 詳細討論了在複合元件中個別 RTD 的偏壓操作程序;這對於多值邏輯應用方面之 RTD 設計 上有其重要性。 |
英文摘要 | This paper presents a theoretical study on the composite resonant tunneling diodes(RTDs) for repetition of negative differential resistance(NDR). First, a self-consistent simulation of single RTD is conducted. After that, a very simple approach based on Kirchhoff's voltage and current laws is developed for the simulation of composite RTDs. Based on a variety of one-peak RTDs, the I-V characteristics of two or more RTDs, vertically integrated, connected serially or in parallel, are calculated and analyzed. Above all, the physical details of the operation sequence of individual RTD in the composite structure are described; this is important for the design of composite RTDs for multiple-valued logic applications. Also, the simulated results are in good agreement with experimental data. |
本系統中英文摘要資訊取自各篇刊載內容。