頁籤選單縮合
題 名 | Application of Anodization followed by Rapid Thermal Treatment to Thin Gate Oxide Growth=陽極氧化並快速熱處理成長薄閘極氧化層之應用 |
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作 者 | 鄭明哲; 胡振國; | 書刊名 | Journal of the Chinese Institute of Electrical Engineering |
卷 期 | 5:4 1998.11[民87.11] |
頁 次 | 頁297-304 |
分類號 | 448.5 |
關鍵詞 | 陽極氧化法; 快速熱密化處理; 快速熱氮化處理; Anodic oxidation; ANO; Rapid thermal densification; Rapid thermal nitridation; |
語 文 | 英文(English) |
中文摘要 | 本文是研究以純水為電解液,利用陽極氧化並快速熱處理技術來成長薄閘極氧化 層。首先陽極氧化是在室溫純水電解液中進行,先成長一層低溫氧化層,然後再以兩種快速 熱處理技術來改善室溫氧化層的特性,即高溫快速熱密化及氮化技術。實驗發現這兩種技術 所成長之薄氧化層比只用快速熱成長之薄氧化層,具有改善氧化層的介面特性崩潰強度之優 點。因此,相信本論文所提供的方法,可以成長高品質之薄閘極氧化層。 |
英文摘要 | Thin gate oxides prepared by pure water anodization followed by high- temperature rapid termal treatment are investigated. The anoidc oxidation (ANO) is carried out at room temperature with a pure water electrolyte. Following anodization, two rapid thermal processes were used to improve the oxide quality. One is high-temperature rapid thermal densification in N �� (ANO/N �� ) and the other is high-temperature rapid thermal nitridation in N �� O (ANO/N �� O). Both of them show the potential to improve the interfacial property and breakdown endurance of thin gate oxides in comparison with conventional rapid thermal oxides. The advantages of uniform interfacial property due to anodization and short time high-temperature process in this method provide a possible way to prepare high-quality thin gate oxides. |
本系統中英文摘要資訊取自各篇刊載內容。