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頁籤選單縮合
題名 | In戓Ga[fec5]P Grown by All Solid Source Molecular Beam Epitaxy=利用固態源分子束磊晶系統生長磷化銦鎵 |
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作者 | 程一誠; 戴國仇; | 書刊名 | Proceedings of the National Science Council : Part A, Physical Science and Engineering |
卷期 | 22:6 1998.11[民87.11] |
頁次 | 頁805-810 |
分類號 | 448.552 |
關鍵詞 | 固態源分子束磊晶系統生長; 磷化銦鎵; SSMBE; InGaP; Valved cracker; AES; V/III ratio; |
語文 | 英文(English) |
中文摘要 | 利用閥門式裂解腔的固態源分子束磊晶系統生長磷相關的化合物半導體是一種新 的磊晶生長技術。閥門式固態源除了避免以前使用固態磷的困難,而且提供了取代磷化氫的 選擇。 利用固態源分子束磊晶系統生長高品質的磷化銦鎵在此亦被探討。在攝氏 490 度生 長條件下,五三比在六到九之間可長出較佳之磷化銦鎵磊晶層,且利用深度歐傑電子光譜儀 與高解析度電子顯微鏡可看出磷 / 砷切換介面良好。 |
英文摘要 | Solid source molecular beam epitaxy (SSMBE) using valved cracking cells as sources of group V fluxes is a novel technology for growing phosphorus-based compound semiconductors. The use of valved solid phosphorus sources avoids previous difficulties associated with the use of solid phosphorus and the use of phosphine. The growth study and characterization of high quality epitaxial layers with SSMBE mainly focus on In�XGa�闢 in this report. With a growth temperature of 490℃ and a Ⅴ/Ⅲ beam equivalent pressure (BEP) flux ratio of 6-9, a high optical quality In�XGa�闢 epitaxial layer can be grown. The sharpness of the arsenic/phosphorus interface is revealed by using an Auger electron spectroscopy (AES) depth profiler and high-resolution transmission electron microscope (HRTEM). |
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