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題 名 | Edge-Illuminated Metal-Oxide-Semiconductor (MOS) Solar Cells with Oxides Prepared by Liquid Phase Deposition Method=以液相沉積法製作側邊接光式金氧半太陽電池及其傳導機制之研究 |
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作 者 | 李國忠; 林金生; 胡振國; | 書刊名 | Journal of the Chinese Institute of Electrical Engineering |
卷 期 | 5:3 1998.08[民87.08] |
頁 次 | 頁195-202 |
分類號 | 468.1 |
關鍵詞 | 太陽電池; 液相沉積法; 側邊接光; 缺陷輔助穿透; 蕭特基位能障; Solar cell; Liquid phase deposition; LPD; Edge-illuminated; Trap assisted tunneling; Schottky barrier; |
語 文 | 英文(English) |
中文摘要 | In this work, we fabricated metal-oxide-semiconductor (MOS) solar cells with oxides prepared by the liquid-phase-deposition (LPD) method. This method has the advantages of low processing temperature and cost. we set the cut edge of the fabricated MOS solar cells to illumination; this unusual configuration is called edge-illuminated MOS. By connecting many edge-illuminated MOS solar cell pieces in a series, high output voltages can obtained. We also substitute the characteristics of Schottky barrier into MOS capacitors (MOS-Cs) with different structures and gate metals to obtain two parameters: built-in potential V and effective barrier height Φ B. The reason for edge-unetched LPD MOS-Cs having smaller V and Φ B is also discussed. To calculate more accurate values of V and Φ B, use the edgeetched LPD MOS-Cs. In addition, when using p-type Si for MOS solar cells, Al, rather than Au, should be ased as one collection electrode to obtain higher conversion efficiency. |
英文摘要 | 在此論文中,我們以液相沉積法製作矽金氧半太陽電池。以液相沉積法製作,具 有室溫製程及製程設備便宜之優點。將此些矽金氧半太陽電池切成小方塊, 並以其邊緣來接 受光能,此種結構之太陽電池稱為側邊接光式金氧半太陽電池。使用側邊接光式金氧半太陽 電池可以很容易的將之串接在一起而能得到高輸出電壓。此外,對於不同結構及使用不同金 屬電極製作之金氣半電容,我們以蕭特基模型計算其內建電壓 V 及有效位能障Φ B。 對於 電極邊緣之氧化未蝕刻掉的金氧半電容,我們發現其 V 及Φ B 都較小,在論文中也將探討 其原因。 若要得到較精準之 V 及Φ B,使用電極邊緣之氧化層被蝕刻掉的金氧半電容來計 算其值是較適當的。 此外,當使用 P 型矽做金氧半太陽電池時,為能獲得較高之光電轉換 效率,使用鋁做電極是較用金做電極為佳的。 |
本系統中英文摘要資訊取自各篇刊載內容。