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題名 | Investigation of Si-MIS Solar Cell Prepared by Liquid-Phase Deposition Method=以液相沉積法製作Si-MIS太陽電池之研究= |
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作者 | 黃建榮; Huang, Chien Jung; |
期刊 | 和春學報 |
出版日期 | 20000900 |
卷期 | 7 2000.09[民89.09] |
頁次 | 頁148-157 |
分類號 | 468.1 |
語文 | eng |
關鍵詞 | 液相沉積法; 太陽電池; |
中文摘要 | 太陽電池可直接利用太陽光將光能轉換成電能以供應各種不同用途。太陽電池具 有方便、安全、無污染等優點,是近年來積極發展之新工業。尤其在臺灣之氣候四季陽光均 非常充足,用一個大型太陽電池組來收集太陽能可以大大的減低在其它能源的浪費與污染。 太陽電池的種類依材料來分主要有Si及化合物半導體,其中Si材料又可分為單晶矽、多 晶矽、與非晶矽太陽電池,為目前常用的太陽電池。化合物半導體則包括Ⅲ-Ⅴ族與Ⅱ-Ⅵ族 等。其中單晶矽太陽電池,採用高純度之矽晶片製成,結構為p-n接面。目前商業化產品效 率可達15%,實驗室級由於改進結構,效率可達20%以上,目前佔所有太陽電池市場40%。 其主要特點為: (1)產生之電力與提供電壓範圍廣 (2)效率高 (3)價格合理 (4)使用年限久且安定 因此單晶矽在太陽電池上具有優良之發展潛力。 本計劃擬發展MIS結構太陽電池,並採用液相沈積法來成長薄氧化層。此型結構之太陽 電池其製程非常簡單而不需要擴散或離子佈植,僅需要在Si基板上成長薄氧化層,正背面鍍 上金屬即可完成。為了增加光吸收效率,亦可在正面鍍上ITO或厚氧化層來當作抗反射層。 由於氧化層內之雜質缺陷,如F離子,有助於太陽電池特性之提升,未來擬朝向在成長溶液 加入不同雜質以探討並尋求高效率MIS太陽電池之製作。另外,本計劃擬製作p-n junction 之太陽電池,吾人可利用LPD法成長SiO�祠茖羶k刻出適當圖案以做為離子佈植或高溫擴散的 光罩,且進一步研究歐姆接觸對MIS太陽電池特性的影響與研製。 |
英文摘要 | Solar cells convert light to electricity and are used in various ways. The advantages are convenient, safe, and no pollution. It becomes a new industry in recent years. Especially, the sunshine is rich in Taiwan so that we can use large solar cell modules to collect sun energy. This will greatly reduce the waste and pollution of other energies. According to material used, the type of solar cells can be divided into Si-based and compound-semiconductor solar cells. The Si-based solar cells could be further divided into single-crystal Si, poly-crystal Si, and amorphous Si, where amorphous Si is commonly used nowadays. Compound-semiconductors include Ⅲ-Ⅴ compounds and Ⅱ-Ⅵ compounds. The single-crystal Si solar cells use high purity Si to fabricate p-n junction. The efficiency of commercial product is up to 15% and increases to 20% with structure improvement in laboratory. Recently, the occupation percentage is 40% in all solar cell markets. The main characteristics are: (1)Wide generation power and supply voltage (2)High output efficiency (3)Reasonable price (4)Long usage time and stable Hence single-crystal Si is good to be used in solar cell application. In this plan, we will develop a MIS type solar cell and use Liquid Phase Deposition (LPD) method to grow thin oxide. The fabrication process is so simple that no need of diffusion or ion implantation, only need to grow thin oxide on Si substrate and evaporate Al on top bottom sides. In order to increase light absorption rate. ITO or thick oxide layer is evaporated to be used as anti-reflection layer. Because the impurity traps, e.g. F ions, are helpful to the improvement of solar cells, we will add different impurities into growth solution to investigate and fabricate high efficiency solar cells. On the other hand, we will also fabricate p-n junction solar cell by using LPD method to grow oxide layer and etched into different pattern to be used as mask for diffusion or ion implantation. |
本系統之摘要資訊系依該期刊論文摘要之資訊為主。