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題 名 | Improved Current-Voltage Characteristics on Four-Terminal GaAs and GaAs/InGaAs/GaAs Field-Effect Transistors=四端型砷化鎵和砷化鎵/砷化銦鎵/砷化鎵場效電晶體之電流-電壓特性的改進 |
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作 者 | 吳昌崙; 許渭洲; | 書刊名 | 吳鳳學報 |
卷 期 | 5 1997.06[民86.06] |
頁 次 | 頁99-107 |
分類號 | 448.552 |
關鍵詞 | 低壓有機金屬化學氣相沉積法; 實空間傳導; 場效電晶體; 歐姆凹槽; 峰對谷電流比值; 互導值; 砷化銦鎵; Low-pressure metalorganic chemical vapor deposition; Real-space transfer; Filed-effect transistor; Ohmic recess; Peak-to-valley current ratio; Extrinsic transconductance; InGaAs; |
語 文 | 英文(English) |
中文摘要 | 利用低壓有機金屬化學氣相沉積法研製出四端型砷化鎵場效電晶體,首先對材料 做一系列的參數及組成分析,然後設計磊晶層並且透過電性和光學分析,找出元件的最佳參 數。 其中,具有δ - 摻雜通道之砷化鎵垂直式實空間傳導電晶體比起均質摻雜通道之砷化 鎵電晶體擁有較佳之負微分電阻特性;而使用砷化銦鎵磊晶層作為通道之砷化鎵電晶體的負 微分電阻現象又比無砷化銦鎵磊晶層作為通道之砷化鎵電晶體更明顯。這些元件結構的優點 如下:(1) 磊晶成長及製程容易, (2) 室溫下具有極大 (高達 432000) 且可調之峰對谷電 流比值,和 (3) 高的電流驅動能力 (大於 950 mA/mm)。另外,在以上元件結構中採用歐姆 凹槽技術來作為電極的話,只要再加上蕭特基閘極,就可以同時測量出高性能的平面式電晶 體放大器特性, 其最大的互導值在室溫下且閘極面積為 1 × 100 μ m �普W過 200 mS/mm ,而相對之輸出飽和電流密度高達 430 mA/mm。值得一提的是,這些研製出的元件在同一晶 片上同時具有放大器和振盪器的功能,將會簡化光電積體電路及單石微波積體電路的製程, 為三 - 五族化物半導體開拓出另一條發展途徑。 |
英文摘要 | Four vertically GaAs real-space transfer transistors (RSTTs) have been implemented and compared by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The GaAs RSTT with a δ -doped channel shows superior negative differential resistance (NDR) characteristics to that with homogeneously doped channel. Moreover, the δ -doped GaAs RSTT with an InGaAs channel shows improved NDR behaviors than that without an InGaAs channel. The present devices possess advantages of:(i) ease of growth and fabrication, (ii) very large (up to 432000) and adjustable peak-to-valley current ratio (PVCR) at room temperature,, and (iii) very high power handling capability (larger than 950 mA/mm). By virtue of ohmic recesses, planar field-effect transistors characteristics with high extrinsic transconductance (large than 200 mS/mm) and high current density (up to 430 mA/mm) are also demonstrated in these RSTT devices with 1 × 100 μ m �� gate electrode simultaneously at room temperature. It is worthy to mention that the proposed devices with co-function of voltage-controlled amplifiers and oscillators can simplify the fabrications of the monolithic microwave integrated circuits (MMICs) and opto-electronic integrated circuits (OEIC's) on III-V compound semiconductors. |
本系統中英文摘要資訊取自各篇刊載內容。