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題名 | 淺談深紫外光光阻劑=Deep UV Light Photoresists |
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作者 | 何邦慶; |
期刊 | 化工資訊月刊 |
出版日期 | 19971000 |
卷期 | 11:10 1997.10[民86.10] |
頁次 | 頁1-17 |
分類號 | 467 |
語文 | chi |
關鍵詞 | 深紫外光光阻劑; |
中文摘要 | 隨著20世紀半導體積體電路高度積體化的快速發展,1995年已進人4M DRAM的量 產階段,隨後16M DRAM也加速進人量產階段;由Semiconductor Industry Association所規 劃出來的Roadmap來看,1998年IC半導體業即將進入線幅0.25μm,也就是256M DRAM的生 產,而248nm與193nm的深紫外光微影技術是唯一可行的技術,其所使用的光阻材料將由目 前的Novolac酚醛樹脂系統進入化學增幅系統(chemical amplification photoresist, CAMP),未來此CAMP材料隨著研發的進展,並搭配霤射光學微影製程,可達到0.15μm或甚 至更小的線幅。光阻劑的發展由g-line(波長436nm的可見光)或i-line(波長365nm紫外 光),取而代之的將是波長更短的深紫外光用光阻劑。本文針對248nm深紫外光光阻劑所遭遇 之問題,探討各開發光阻劑公司的解決之道,以供國內研發之參考。 |
英文摘要 | The accelerated development of Taiwan's semiconductor industry has led to highly integrated circuits with on increasing number of devices pocked into the already crowed silicon wafer. The moss production of 4M DRAM began in 1 995, along with 16 M DRAM to shortly begin mass production. According to the project goals established by the Semiconductor Industry Association, by 1 998 the line width will evolve into the 0.25 μm era for the local semiconductor industry, which signals the beginning of production of the 256M DRAM. The only available technologies to undertake such a task available are the 248 nm and 193 nm DUV "microlithographies". In addition, the photoresist of the Novolac phenolic resin will be replaced by the chemical amplification photoresist (CAMP). With the development of an enhanced resist material and optical enhancement technique, the line width will be reduced to 0.15 μm or even smaller. Consequently, the conventional g-line (436nm) and I-line (365nm) resist will be phased out, and the new resist for the future will be DUV photoresist. This article addresses the obstacles encountered in developing the 248 nm DUV photoresist, along with the varied solutions by different research groups. Information provided herein can hopefully provide a valuable reference for fellow researchers in the local industry. |
本系統之摘要資訊系依該期刊論文摘要之資訊為主。