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題 名 | 以4x10[fee4] Dose/cm[feb4]矽離子佈植100 nm二氧化矽薄膜經100℃快速退火之光激發螢光研發=Photoluminescence of 1100℃ Rapid Thermal Annealing 4x10[fee4]Dose/cm[feb4]Silicon Implanted SiO[feaf]in 100nm Film |
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作 者 | 蔡震寰; 張毅; 高進興; 曾昆福; 張廷桓; 廖志雄; | 書刊名 | 中正嶺學報 |
卷 期 | 26:1 1997.07[民86.07] |
頁 次 | 頁35-45 |
分類號 | 468 |
關鍵詞 | 矽離子佈植; 快速退火; 光激發螢光; Silicon implanation; Rapid thermal annealing; Photoluminescence; |
語 文 | 中文(Chinese) |
中文摘要 | 本文闡明經低於10 Dose/cm 矽離子佈植之n型矽晶片、等於或小於100 nm厚 度乾氧式(Dry Oxide)二氧化矽薄膜,在1100℃持續20秒以內快速退火下,可製造出光激 發螢光(Photoluminescence, PL)的發光機制且其強度極值為毫米級厚度多孔矽的百分之一 至十分之一間的方法,並做一深入探討;以4×10 Dose/cm 90KeV矽離子佈植過的乾氧 式二氧化矽薄膜經1100℃快速退火處理過程,靠近薄膜表面區域所產生的PL發光機制強度 極值對應波長在650nm左右(1.8~1.9eV),且經600℃30分鐘退火處理後,PL發光現象急 劇轉微,所以符合E' Center(O –Si.)出現時的發光特性。 |
英文摘要 | This paper is to study the relation between photoluminescence (PL) and the silicon implanted SiO film after Si ion concertration and the rapid thermal annealing at 1100℃ under 20 seconds. The order of 4×10 Dose/cm Si ion concertration and the scale of 100 nm SiO film are all new records to fabricate ion implantation PL mechanism till now, though its PL intensity is just 2 orders of magnitude lower than that of porous Silicon (PSi). The SiO film with point defect structure resulted from silicon implantation leads the recombination in the neighborhood of Air/ SiO interface after rapid thermal annealing at 1100℃, which is attributed to the presence of E' center because a visible PL peak is observed at about 650 nm and the PL mechanism disappears approximately after heating to 600℃. |
本系統中英文摘要資訊取自各篇刊載內容。