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題名 | 單一粒界VLSI鋁線之EM現象研究=Electromigration in a Single Grain Boundary Structure AL Line |
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作者 | 洪朝富; 簡恩義; 潘瑞清; 徐加玲; 黃建仁; | 書刊名 | 技術學刊 |
卷期 | 12:3 1997.09[民86.09] |
頁次 | 頁433-438 |
分類號 | 448.57 |
關鍵詞 | 平均壽命; 粒界; 空隙; 空洞; VLSI; EM; MTF; Grain boundary; Void; Vacancy; |
語文 | 中文(Chinese) |
中文摘要 | VLSI的微細化使傳導信號之金屬線單位面積所流過的電流密度倍增,造成VLSI 的信賴性問題,同時隨著VLSI微細化金屬線的形狀也有階段性改變。此論文為了解現階段 的竹節狀(Bamboo structure)鋁線的粒界與EM之關係,我們特別由EM測試的經驗中提出粒 界(GB)有如一水壩物理模型,並用差分法分析空洞(vacancy)在粒界中的搬運過程,證實 粒界有阻斷空洞的運搬,造成空洞的過飽合作用之阻斷現象。本文利用VLSI加工技術製造 出單一粒界鋁線,通以3.5╳10□A/cm2的電流.並用電子顯微鏡(SEM)觀察空隙成長;同時 以本物理模型和電子流碰撞法則定量定時地分析空隙成長,得知空隙是由電子流碰撞鋁離 子的流束與粒界的阻隔有關。 |
英文摘要 | Scale shrinkage in VLSI demands a higher current density for aluminum (AI) interconnections. In this situation, electromigration (EM) has become a key factor which determines the lifetime of interconnection. At present, that of width of the line is smaller than the size of the grain. Furthermore, the grain structure.' of the AI line is like the bamboo. The object of this paper is to analyze the EM effect of single grain boundary aluminum line. We assumed that the grain boundary was like a dam. The vacancies generated by EM would be moved to this region and accumulated. Then, the difference method was used to simulate the vacancy's transmission phenomenon in the aluminum grain. On this calculation the activation energy in the aluminum grain and grain boundary was different. The simulated results were in agreement with our model. In an EM test, the test current density was 3.5╳10□A/cm□. The test current was interrupted when the resistance increased to 10%. Then we put the sample in SEM to estimate the void volume. The vacancy's flux was calculated from the test time and void volumes. It was 1.2╳10□ in Al line. The current induced vacancy's flux was 1.2╳10□. This estimation was in agreement with the experiment results. The vacancies accumulated on the boundary region @ere investigated to produce our model. |
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