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| 題 名 | Improvement in Radiation Hardness of CMOS Inverters and Circuits by Adding Compensation Resistors=利用補償電阻法改善互補式金氧半電路的抗輻射能力 |
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| 作 者 | 鄭明哲; 胡振國; | 書刊名 | 新埔學報 |
| 卷 期 | 15 1997.06[民86.06] |
| 頁 次 | 頁137-160 |
| 分類號 | 448.532 |
| 關鍵詞 | 補償電阻法; 互補式金氧半電路; 抗輻射能力; Radiation hardness; CMOS inverter CMOS circuit; Compensation resistor; |
| 語 文 | 英文(English) |
| 英文摘要 | The adding of a compensation resistor to the traditional CMOS inverter is proposed as an efficient way to reduce the CMOS threshold voltage shift caused by irradiation. A good agreement between the experimental and the simulated results is observed in both DC transfer characteristics and switching time performance. The compensation resistors with values ranging from 25KΩ to 65KΩ are suggested for CMOS inverters to have threshold voltage shift percentage (△Vth/Vth × 100%) smaller than 10% when they are irradiated by Co-60 with total doses ranging from 500K to 1M rads. A power-delay-voltage shift product is defined as an evaluation factor for choosing the most suitable compensation resistor in designing the radiation-hard circuits. |
本系統中英文摘要資訊取自各篇刊載內容。