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題名 | Effect of Oxidation Pressure on the Electrical and Radiation Hardness Properties of Rapid Thermal Oxides=氧化生長壓力對快速熱氧化層電特性及抗輻射能力之影響 |
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作者 | 陳錦揚; 胡振國; Chen, Chin-yang; Hwu, Jenn-gwo; |
期刊 | Proceedings of the National Science Council : Part A, Physical Science and Engineering |
出版日期 | 19970300 |
卷期 | 21:2 1997.03[民86.03] |
頁次 | 頁166-172 |
分類號 | 448.5 |
語文 | eng |
關鍵詞 | 氧化生長壓力; 熱氧化層電特性; 抗輻射能力; MOS device; Rapid thermal oxidation; Pressure; |
中文摘要 | 本文研究氧化生長壓力在快速熱薄閘極氧化層特性上之效應。純氧氣及氧和氮氣 混合均用來做為氧化生長之環境。時變介質崩潰( TDDB )及抗輻射特性做為氧化生長之環 境。時變介質崩潰( TDDB )及抗輻射特性做為金氧半結構元件之好壞判斷用。實驗發現不 同厚度氧化層之元件會呈現不同之行為。在純氧氣環境下,低氧化壓力可改善初始氧化層特 性,但卻會造成 TDDB 特性之退化。至於抗輻射特性則與氧氣壓力不太有關係。當氮氣加入 氧氣環境時,部份之退火效應將出現,進而改善了初始氧化層特性及 TDDB 特性,但是抗輻 射特性卻明顯地退化了。 |
英文摘要 | The characteristics of rapid thermal thin gate oxides are studied with respect to the oxidation pressure. Both pure O �� ambient and a mixture of O �� +N �� ambient are used for the oxidation environment. The time-dependent-dielectric-breakdown ( TDDB ) and radiation hardness properties are examined for devices having a metal-oxide-semiconductor ( MOS ) structure.It is found that samples with different oxide thicknesses exhibit quite different behavior. In pure O �� ambient, low oxidation pressure improves the initial oxide property but degrades the TDDB. Radiation hardness shows little dependence on O �� pressure. When N �� is added into O �� ambient, a partial annealing effect occurs which improves the initial oxide property and TDDB endurance but degrades the radiation hardness significantly. |
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