查詢結果分析
來源資料
頁籤選單縮合
題 名 | Electron Tunneling and Energy Gap in Y-Ba-Cu-O Thin Films=釔鋇銅氧薄膜的電子穿隧及其能隙 |
---|---|
作 者 | 賴再興; 李軼賢; 盧榮宏; | 書刊名 | 中原學報 |
卷 期 | 21 1992.12[民81.12] |
頁 次 | 頁22-30 |
分類號 | 337 |
關鍵詞 | 穿隧; 能隙; 電子; 薄膜; 釔鋇銅氧; 電子穿隧能譜; YBCO/Pb穿隧接面; 零偏壓異常; 親和效應; Electron tunneling spectroscopy; YBCO/Pb tunneling junction; Energy gap; Zero-Bias anomaly; Proximity effect; |
語 文 | 英文(English) |
中文摘要 | 我們使用離軸式直流濺鍍系統原位製作出具有Tc(onset)約為83K的YBa₂Cu₃0x超導薄膜,再利用熱蒸鍍法鍍上鉛做為相對電極而形成三明治型的穿隧接面以供研究。電流一電壓曲線及其第一導函數顯示出釔鋇銅氧薄膜的能隙結構,其值大約是△~40meV,2△/kBTc~12.4。在溫度低於鉛的臨界溫度時,觀察到零偏壓附近的多餘電導,我們將此結構歸因於相對電極鉛的能隙。 |
英文摘要 | We in situ fabricate YBa₂Cu₃0x thin film with Tc (onset)=83K by an off-axis DC sputtering system. Sandwich-type tunneling junction using evaporating method with a Pb counterelectrode is then investigated. The first derivative and the 1-V curve exhibits a clear gap structure with large gap parameter △≅40meV and 2△/kBTc≅12.4 for YBa2Cu3O. At temperatures below Tc of lead, excess conductance around zero bias voltage is observed. Our resuIts suggest that the structure may be attributed to the gap of the Pb counterelectrode. |
本系統中英文摘要資訊取自各篇刊載內容。